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NLV17SZ86DFT2G

Onsemi

NLV17SZ86DFT2G by Onsemi

NLV17SZ86DFT2G by Onsemi is a Logic Gate with 7.5ns Propagation Delay, 1.8V Nominal Voltage, and 32A Max I (ol). Ideal for applications requiring fast signal processing in automotive electronics due to AEC-Q100 screening level and -55°C to 125°C operating temperature range.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 198,000 parts In-Stock

1+ parts

$0.170

100+ parts

$0.170

1k+ parts

$0.160

10k+ parts

-

198,000

$0.170

$0.170

$0.160

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Future Electronics

Canada . 27,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.033

27,000

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$0.033

Distributors (In-Stock)

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Digiode

USA . 1,468 parts In-Stock

1+ parts

$0.162

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1,468

$0.162

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Chip Stock

USA . 108,752 parts In-Stock

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108,752

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Vyrian

USA . 6,205 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,860 parts In-Stock

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2,860

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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Ampacity Inc.

Singapore . 112,072 parts In-Stock

1+ parts

$0.028

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-

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112,072

$0.028

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Corohmni

South Africa . 182 parts In-Stock

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$0.033

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182

$0.033

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Vigor

Singapore . 229 parts In-Stock

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$0.110

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229

$0.110

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Corphita

USA . 2,439 parts In-Stock

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$0.153

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2,439

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Microchip USA

USA . 5,484 parts In-Stock

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$0.734

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$0.734

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AZTECH Wire

Italy . 632 parts In-Stock

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$13.300

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632

$13.300

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Infinite Electronics LLP (Excess)

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Problanco Electronics

Mexico . 7,832 parts In-Stock

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Kulean Microsystems

USA . 5,180 parts In-Stock

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SupplyDigital Components

Austria . 4,431 parts In-Stock

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Continental Prestige Electronics

USA . 3,625 parts In-Stock

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Argo Parts USA

USA . 3,356 parts In-Stock

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TANS Electronics

Latvia . 2,073 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Robosynatics

Brazil . 790 parts In-Stock

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Lucentia Tech

USA . 790 parts In-Stock

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$32.591

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$31.926

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$31.926

790

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$31.926

$31.926

UHIMA Technologies

Türkiye . 531 parts In-Stock

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531

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Overview

Looking for top-notch logic gates for your next project? Look no further than the NLV17SZ86DFT2G by Onsemi! With a reputation for excellence in manufacturing, Onsemi delivers superior quality and reliability. Ideal for a wide range of applications, these logic gates offer fast propagation delays and low power consumption, making them perfect for demanding tasks. Upgrade your circuits with the NLV17SZ86DFT2G and experience the benefits of high performance and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, suitable for portable or compact devices.

Propagation Delay At Nominal Supply: 7.5 ns

Fast propagation delay ensures quick response time, ideal for high-speed applications.

Surface Mount: YES

Surface mount packaging allows for easy installation and space-saving on PCBs.

No. of Inputs: 2

Having 2 inputs provides flexibility in designing logic functions.

Nominal Supply Voltage / Vsup (V): 1.8

Low supply voltage helps in reducing power consumption and heat dissipation.

Maximum Operating Temperature: 125 °C

High operating temperature range makes it suitable for industrial and automotive applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

Technical Specifications

Logic Gates NLV17SZ86DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay At Nominal Supply:

7.5 ns

Propagation Delay (tpd):

14.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV17SZ86DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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