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NLV14011UBCPG

Onsemi

NLV14011UBCPG by Onsemi

NLV14011UBCPG by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 180ns propagation delay. It operates b/w -55 to 125 °C, suitable for military-grade applications. With a supply voltage range of 3-18V, it is ideal for automotive electronics due to AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,182 parts In-Stock

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Digiode

USA . 878 parts In-Stock

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Kulean Microsystems

USA . 6,180 parts In-Stock

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TANS Electronics

Latvia . 2,982 parts In-Stock

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Corphita

USA . 1,354 parts In-Stock

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SupplyDigital Components

Austria . 753 parts In-Stock

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Problanco Electronics

Mexico . 588 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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UHIMA Technologies

Türkiye . 220 parts In-Stock

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Overview

Enhance your electronic projects with the NLV14011UBCPG by Onsemi, a top-quality logic gate that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this logic gate is perfect for a wide range of applications. With its advanced technology and durable construction, this product provides exceptional value to customers by delivering fast propagation delay and a wide operating temperature range. Trust Onsemi's expertise and elevate your designs with the NLV14011UBCPG logic gate.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective.

No. of Functions: 4

Having 4 functions in one component reduces the need for multiple separate components, saving space and simplifying circuit design.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making this product suitable for automotive applications.

Nominal Supply Voltage: 5V

The 5V supply voltage is a common standard, making this product compatible with a wide range of systems.

Propagation Delay: 180 ns

The low propagation delay of 180 ns ensures fast signal processing and minimal delay in circuit operations.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C allows this product to withstand harsh environments and extended use.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable.

Technical Specifications

Logic Gates NLV14011UBCPG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.86 mm

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

180 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

4.69 mm

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

NLV14011UBCPG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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