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SN74LVC1G34DCKR

Texas Instruments

SN74LVC1G34DCKR by Texas Instruments

SN74LVC1G34DCKR by Texas Instruments is a CMOS logic gate with 3.3V nominal voltage, 4.1ns propagation delay, and 50pF load capacitance. It is ideal for automotive applications due to its wide operating temperature range of -40°C to 125°C and small package size of 2mm x 1.25mm.

Median Price

$0.143

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

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Arrow

USA . 7 parts In-Stock

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Chip1Stop

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Texas Instruments

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Mouser Electronics

USA . 23,915 parts In-Stock

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DigiKey

USA . 166,523 parts In-Stock

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RS (Exports)

UK . 15,900 parts In-Stock

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Verical

USA . 553 parts In-Stock

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Nova Conductors

Japan . 650 parts In-Stock

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Digiode

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TME

Poland . 1,218 parts In-Stock

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Maritex

Poland . 7,077 parts In-Stock

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Component Electronics Inc.

Canada . 5 parts In-Stock

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DF Sales Co.

USA . 30 parts In-Stock

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DF Sales Co.

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Chip Stock

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Vyrian

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Bristol Electronics

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Prism Electronics

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Pegasus Components GmbH

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Velocity Electronics

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Holdelec - ElecDif-Pro

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PC Components Company LLC

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Semicontronic

India . 17,422 parts In-Stock

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Argo Parts USA

USA . 2,936 parts In-Stock

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Ampacity Inc.

Singapore . 17,328 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Corphita

USA . 2,639 parts In-Stock

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Continental Prestige Electronics

USA . 2,018 parts In-Stock

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Parana Technologies

USA . 1,522 parts In-Stock

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DigiPath Technology Company

USA . 2,088 parts In-Stock

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ChromeModa Solutions

Germany . 1,939 parts In-Stock

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IDEA Electronic Components Group

UK . 1,732 parts In-Stock

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Corohmni

South Africa . 1,037 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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QUARKTWIN TECHNOLOGY LTD

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Futuretech Components

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A-Z Elektronik GmbH

Germany . 4,580 parts In-Stock

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Robosynatics

Brazil . 58 parts In-Stock

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Lucentia Tech

USA . 58 parts In-Stock

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$22.778

Overview

Experience the reliability and efficiency of Texas Instruments with the SN74LVC1G34DCKR Logic Gate. This high-quality product offers fast propagation delays and low power consumption, making it ideal for a wide range of applications. Whether you're working on automotive electronics or industrial automation, this logic gate provides the performance and precision you need. Trust in Texas Instruments to deliver cutting-edge technology that enhances your projects and boosts your productivity. Choose the SN74LVC1G34DCKR for superior quality and unmatched value.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 4.1 ns

Low propagation delay ensures fast and efficient signal processing.

Surface Mount: YES

Easy to install on circuit boards without the need for additional mounting hardware.

Nominal Supply Voltage / Vsup (V): 3.3

Compatible with a common supply voltage, making it versatile for different applications.

Output Characteristics: 3-STATE

Supports three states (high, low, and high-impedance), providing flexibility in signal output.

Technology: CMOS

Uses CMOS technology for low power consumption and high noise immunity.

Technical Specifications

Logic Gates SN74LVC1G34DCKR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.001 mA

Propagation Delay At Nominal Supply:

4.1 ns

Propagation Delay (tpd):

9.9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G34DCKR Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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