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NLV14025BDG

Onsemi

NLV14025BDG by Onsemi

NLV14025BDG by Onsemi is a CMOS Logic Gates IC with 3 functions and 3 inputs. It operates at a supply voltage range of 3-18V, with a propagation delay of 300ns. Suitable for military-grade applications due to AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,308 parts In-Stock

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Digiode

USA . 2,095 parts In-Stock

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Vigor

Singapore . 359 parts In-Stock

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$0.240

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AZTECH Wire

Italy . 861 parts In-Stock

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Kulean Microsystems

USA . 7,609 parts In-Stock

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Problanco Electronics

Mexico . 5,354 parts In-Stock

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SupplyDigital Components

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Microchip USA

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TANS Electronics

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Corphita

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UHIMA Technologies

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Overview

Discover the NLV14025BDG by Onsemi, a top-quality logic gate that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With its fast propagation delay and high-speed operation, the NLV14025BDG ensures smooth and efficient functionality. Its advanced technology and durable construction make it a valuable asset for any project. Upgrade your system with the NLV14025BDG and experience the benefits of superior quality and performance. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and resistance to heat, making the product reliable for various applications.

Propagation Delay At Nominal Supply: 300 ns

The quick propagation delay ensures efficient signal transmission within the device, contributing to its high performance.

Surface Mount: YES

The surface mount capability allows for easy installation on circuit boards, saving space and simplifying assembly processes.

No. of Functions: 3

Having multiple functions in one component reduces the need for additional discrete components, leading to a more compact and cost-effective design.

Screening Level: AEC-Q100

Being AEC-Q100 qualified ensures that the product meets stringent automotive industry standards for reliability, making it suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes integration with other components simpler and ensures compatibility with common power supplies.

Load Capacitance (CL): 50 pF

The low load capacitance helps in reducing signal distortion and improving overall signal integrity in the circuit.

Minimum Operating Temperature: -55 °C

With a wide operating temperature range, the device can function reliably in harsh environments or extreme temperature conditions.

Maximum Supply Voltage (Vsup): 18 V

The ability to handle a maximum supply voltage of 18V provides flexibility in power supply options, allowing the device to be used in a variety of applications.

Technical Specifications

Logic Gates NLV14025BDG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

3

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

300 ns

Propagation Delay (tpd):

300 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV14025BDG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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