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NLVVHC1GT125DF2G

Onsemi

NLVVHC1GT125DF2G by Onsemi

NLVVHC1GT125DF2G by Onsemi is a 5V bus driver with 16ns propagation delay, suitable for military applications. It features 3-STATE output, -55 to 125 °C operating temp range, and AEC-Q100 screening level. Ideal for driving buses in harsh environments requiring fast response times.

Median Price

$0.042

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 21,000 parts In-Stock

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Verical

USA . 18,000 parts In-Stock

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$0.041

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$0.041

Rochester

USA . 869 parts In-Stock

1+ parts

-

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$0.044

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$0.037

10k+ parts

$0.033

869

-

$0.044

$0.037

$0.033

Distributors (In-Stock)

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NexGen Digital

USA . 84,000 parts In-Stock

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Flip Electronics

USA . 21,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 17,460 parts In-Stock

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Vyrian

USA . 3,043 parts In-Stock

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Digiode

USA . 1,260 parts In-Stock

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Bristol Electronics

USA . 430 parts In-Stock

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$0.188

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$0.113

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430

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$0.113

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Distributors (Availability)

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Corohmni

South Africa . 272 parts In-Stock

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$0.312

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Vigor

Singapore . 710 parts In-Stock

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$0.460

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$0.460

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Microchip USA

USA . 3,261 parts In-Stock

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$0.909

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AZTECH Wire

Italy . 570 parts In-Stock

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$14.610

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RC Electronics

USA . 69,276 parts In-Stock

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Futuretech Components

Singapore . 59,980 parts In-Stock

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Kepictronics

USA . 27,000 parts In-Stock

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Lixinc

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 8,395 parts In-Stock

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SupplyDigital Components

Austria . 6,271 parts In-Stock

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Corphita

USA . 1,589 parts In-Stock

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TANS Electronics

Latvia . 1,356 parts In-Stock

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UHIMA Technologies

Türkiye . 207 parts In-Stock

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Kulean Microsystems

USA . 180 parts In-Stock

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Overview

Enhance your electronic designs with the NLVVHC1GT125DF2G by Onsemi, a premium bus driver and transceiver component that boasts top-notch quality and reliability. Manufactured by Onsemi, a trusted name in the industry, this product offers unmatched performance and durability. Ideal for a wide range of applications, this compact and versatile device is a game-changer in the world of electronics. With features like true output polarity and a maximum power supply current of 50 mA, this product delivers exceptional value and benefits to customers looking to elevate their projects to the next level. Elevate your designs today with the NLVVHC1GT125DF2G from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for use in automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a commonly used voltage level, ensuring compatibility with a wide range of systems.

Propagation Delay (tpd): 16 ns

Fast propagation delay allows for quick data transmission, improving overall system efficiency.

Output Characteristics: 3-STATE

Supports 3-state outputs, providing flexibility in controlling the bus signals and reducing power consumption when not in use.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, making it suitable for harsh environments without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing reliability and efficiency.

Technical Specifications

Bus Driver & Transceivers NLVVHC1GT125DF2G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

80 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

16 ns

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

NLVVHC1GT125DF2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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