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NLVVHC1G125DFT1G

Onsemi

NLVVHC1G125DFT1G by Onsemi

NLVVHC1G125DFT1G by Onsemi is a CMOS bus driver with 5V nominal voltage, 80A max I (ol), and 16ns propagation delay. It is used in military applications due to its AEC-Q100 screening level, -55 to 125 °C operating temperature range, and TRUE output polarity.

Median Price

$10.269

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Ozdisan Elektronik

Türkiye . 2,880 parts In-Stock

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$20.163

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Sensible Micro Corp

USA . 1,805,798 parts In-Stock

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Chip Stock

USA . 93,680 parts In-Stock

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Microfarads

USA . 2,835 parts In-Stock

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Vyrian

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Bristol Electronics

USA . 2,562 parts In-Stock

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$0.375

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Digiode

USA . 1,620 parts In-Stock

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Distributors (Availability)

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Vigor

Singapore . 265 parts In-Stock

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$0.420

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265

$0.420

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Component Stockers USA

USA . 4,768 parts In-Stock

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$0.500

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$0.300

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$0.180

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Microchip USA

USA . 4,382 parts In-Stock

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$1.241

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AZTECH Wire

Italy . 404 parts In-Stock

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$19.580

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404

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Corohmni

South Africa . 494 parts In-Stock

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$19.809

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Kepictronics

USA . 36,224 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 6,285 parts In-Stock

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SupplyDigital Components

Austria . 4,876 parts In-Stock

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 2,880 parts In-Stock

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Problanco Electronics

Mexico . 2,772 parts In-Stock

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TANS Electronics

Latvia . 2,593 parts In-Stock

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Corphita

USA . 2,099 parts In-Stock

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Lixinc

USA . 721 parts In-Stock

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UHIMA Technologies

Türkiye . 330 parts In-Stock

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Overview

Enhance your electronic designs with the NLVVHC1G125DFT1G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers top-notch quality and reliability. This Bus Driver & Transceiver is perfect for a wide range of applications, offering a nominal supply voltage of 5V and a maximum operating temperature of 125°C. With its compact design and advanced features like a 3-STATE output, this product provides unmatched value and performance to customers. Elevate your projects with the NLVVHC1G125DFT1G from Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body makes the product durable and resistant to environmental factors, ensuring a longer lifespan.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the PCB, making it suitable for compact designs.

Nominal Supply Voltage: 5V

The nominal supply voltage of 5V is common and easily available, making it convenient to power the device.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environments and temperature variations, ensuring reliability in various conditions.

Technology: CMOS

The CMOS technology used in this product offers low power consumption and high noise immunity, making it energy-efficient and reliable for long-term use.

Technical Specifications

Bus Driver & Transceivers NLVVHC1G125DFT1G attributes and parameters. Explore more Bus Driver & Transceivers devices from Onsemi

Specs

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

80 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

16 ns

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

NLVVHC1G125DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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