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SN74LVC1G08DCKRG4

Texas Instruments

SN74LVC1G08DCKRG4 by Texas Instruments

SN74LVC1G08DCKRG4 by Texas Instruments is a CMOS logic gate with 2 inputs, 8 ns propagation delay, and 3.3V nominal voltage. It is used in automotive applications due to its small outline package and thin profile design, making it suitable for high-temperature environments up to 125°C. The device features a low power supply current of 0.01 mA and can operate within a wide temperature range from -40°C to 125°C.

Median Price

$0.252

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Texas Instruments

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Arrow

USA . 59 parts In-Stock

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Mouser Electronics

USA . 30,170 parts In-Stock

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DigiKey

USA . 4 parts In-Stock

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Adafruit Industries

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Chip1Stop

Japan . 830 parts In-Stock

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Verical

USA . 333 parts In-Stock

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Mobius Materials

USA . 4,760 parts In-Stock

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Digiode

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Nova Conductors

Japan . 100 parts In-Stock

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IBS Electronics

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Connector Distribution Corp

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Right Parts Inc.

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Bristol Electronics

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Sensible Micro Corp

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Netsource Technology, Inc.

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Ampacity Inc.

Singapore . 28,322 parts In-Stock

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$0.099

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Semicontronic

India . 28,179 parts In-Stock

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$0.097

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$0.096

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Modulus Dynamics

Lithuania . 26 parts In-Stock

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Corphita

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Continental Prestige Electronics

USA . 3,442 parts In-Stock

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Argo Parts USA

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Netroflash

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Component Stockers USA

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Corohmni

South Africa . 664 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

USA . 2,364 parts In-Stock

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ChromeModa Solutions

Germany . 4,289 parts In-Stock

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IDEA Electronic Components Group

UK . 1,299 parts In-Stock

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Perfect Parts

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Lixinc

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Speed Components Ltd (Excess)

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Looking for high-quality logic gates for your automotive applications? Look no further than the SN74LVC1G08DCKRG4 by Texas Instruments. With a reputation for excellence, Texas Instruments delivers reliability and precision in every product. This small outline, thin profile logic gate offers a propagation delay of just 4.5 ns at a nominal supply voltage of 3.3V, making it ideal for fast and efficient circuit designs. Trust Texas Instruments to provide the performance and value you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the logic gates, ensuring they can withstand various environmental conditions.

Propagation Delay At Nominal Supply: 4.5 ns

Low propagation delay ensures fast response times in processing signals, making the logic gates suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving time and effort during assembly.

No. of Inputs: 2

Having 2 inputs provides flexibility in designing logic circuits and allows for a wider range of logic operations to be performed.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a common voltage of 3.3V makes these logic gates compatible with many standard electronic systems and components.

Load Capacitance (CL): 50 pF

The specified load capacitance ensures proper signal integrity and performance when interfacing with other components in a circuit.

Power Supplies (V): 3.3

Consistent with the nominal supply voltage, the power supplies offer stability and reliability for the logic gates to operate effectively.

No. of Terminals: 5

Having a minimal number of terminals simplifies the connections required for integrating the logic gates into a circuit, reducing complexity.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

The compact and slim package design saves space on the PCB, allowing for higher component density and efficient use of board real estate.

Maximum I (ol): 32 Amp

With a high maximum output current, these logic gates can drive power-hungry loads and offer robust performance in demanding applications.

Propagation Delay (tpd): 8 ns

Even though it's not the fastest, 8ns propagation delay still ensures quick signal processing suitable for most applications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature enables the logic gates to function reliably in elevated temperature environments.

Minimum Operating Temperature: -40 °C

The wide temperature range allows these logic gates to operate in extreme cold conditions, making them suitable for diverse applications.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

The quality finish on the terminals provides excellent conductivity and corrosion resistance, ensuring long-term performance and reliability.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and ease of connection in various circuit layouts.

Maximum Seated Height: 1.1 mm

The low profile design with a maximum seated height of 1.1mm enables space-efficient PCB layouts and reduces the overall height of the final assembly.

Width: 1.25 mm

Narrow width of 1.25mm saves precious board space and allows for compact circuit designs.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage requirement makes these logic gates suitable for low-power applications and extends battery life in portable devices.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance ensures the reliability of solder joints during manufacturing processes.

Length: 2 mm

The small length of 2mm contributes to the compact form factor of the logic gates, allowing for efficient use of space on the PCB.

Temperature Grade: AUTOMOTIVE

Certified for automotive applications, these logic gates meet the stringent quality and reliability standards required in the automotive industry.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems.

Terminal Form: GULL WING

The gull-wing terminal form provides mechanical strength and secure soldering connections during assembly processes, ensuring durability and reliability.

Packing Method: TR

The tape and reel packing method facilitates automated pick-and-place assembly, streamlining production processes and reducing assembly time.

Terminal Pitch: 0.65 mm

The fine terminal pitch of 0.65mm allows for high-density mounting on PCBs, enabling compact designs and efficient use of available board space.

Maximum Supply Voltage (Vsup): 5.5 V

The high maximum supply voltage tolerance ensures compatibility with a wide range of power supply configurations and operating conditions.

Maximum Power Supply Current (ICC): 0.01 mA

With low power consumption of only 0.01mA, these logic gates help conserve energy and are ideal for battery-operated devices.

Technical Specifications

Logic Gates SN74LVC1G08DCKRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.5 ns

Propagation Delay (tpd):

8 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74LVC1G08DCKRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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