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NLV17SZ02DFT2G

Onsemi

NLV17SZ02DFT2G by Onsemi

NLV17SZ02DFT2G by Onsemi is a CMOS Logic Gate with 2 inputs, 12ns propagation delay, and 32A max I (ol). It operates b/w -55 to 125 °C and has a supply voltage range of 1.65V to 5.5V. Ideal for military-grade applications requiring fast response times in compact spaces.

Median Price

$0.084

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 36,000 parts In-Stock

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$0.038

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$0.038

DigiKey

USA . 15,000 parts In-Stock

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$0.130

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Flip Electronics (Authorized)

USA . 15,000 parts In-Stock

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Vyrian

USA . 2,164 parts In-Stock

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Chip Stock

USA . 37,000 parts In-Stock

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USA . 15,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

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TME

Poland . 2,644 parts In-Stock

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$0.125

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$0.080

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$0.057

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Digiode

USA . 2,104 parts In-Stock

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Corohmni

South Africa . 86 parts In-Stock

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$0.038

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Vigor

Singapore . 139 parts In-Stock

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$0.470

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Perfect Parts

USA . 352,800 parts In-Stock

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GreenTree Electronics

Israel . 255,000 parts In-Stock

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RC Electronics

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Kulean Microsystems

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 4,257 parts In-Stock

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SupplyDigital Components

Austria . 3,271 parts In-Stock

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Component Stockers USA

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TANS Electronics

Latvia . 2,290 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 344 parts In-Stock

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Overview

Unlock the power of efficient logic gates with the NLV17SZ02DFT2G by Onsemi. As a trusted manufacturer in the industry, Onsemi delivers quality components that meet AEC-Q100 screening standards. Ideal for applications requiring quick signal processing, this small outline, thin profile device offers a nominal supply voltage of 2.3V and 2 inputs to enhance performance. With a maximum propagation delay of 12ns, military-grade temperature grade, and a range of -55 to 125 °C, this logic gate provides reliable operation in challenging environments. Elevate your projects with the NLV17SZ02DFT2G and experience the benefits of top-notch quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to external factors, ensuring the reliability and longevity of the product.

Surface Mount: YES

Surface mount capability makes installation and assembly easier, saving time and effort during production.

Screening Level: AEC-Q100

AEC-Q100 screening level ensures high quality and reliability, making it suitable for automotive applications where durability is crucial.

Nominal Supply Voltage: 2.3V

Low nominal supply voltage of 2.3V helps in reducing power consumption and heat generation, making it energy efficient.

Maximum Operating Temperature: 125 °C

High maximum operating temperature of 125 °C allows the product to withstand harsh environmental conditions without performance degradation.

Technical Specifications

Logic Gates NLV17SZ02DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV17SZ02DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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