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LC75814V-MPB-E

Onsemi

LC75814V-MPB-E by Onsemi

LC75814V-MPB-E by Onsemi is a CMOS IC with 16 segments, operating at -40 to 85 °C. It has a supply current of 0.46 mA and supports 3/5V power supplies. Ideal for industrial applications requiring segment display mode in a small outline package.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 80,000 parts In-Stock

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Vyrian

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Digiode

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AZTECH Wire

Italy . 686 parts In-Stock

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SupplyDigital Components

Austria . 8,341 parts In-Stock

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TANS Electronics

Latvia . 3,396 parts In-Stock

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Problanco Electronics

Mexico . 3,327 parts In-Stock

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Corphita

USA . 2,465 parts In-Stock

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Corohmni

South Africa . 416 parts In-Stock

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UHIMA Technologies

Türkiye . 368 parts In-Stock

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Microchip USA

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Kulean Microsystems

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Overview

Discover the innovative LC75814V-MPB-E by Onsemi, a cutting-edge interface IC that promises top-notch quality and reliability. Designed by a trusted manufacturer, this product offers unmatched performance in various applications. With its advanced features and user-friendly design, this IC provides exceptional value and benefits to customers. Experience seamless operation and enhanced functionality with the LC75814V-MPB-E, making it an ideal choice for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and heat resistance for the IC, ensuring a longer lifespan.

Display Mode: SEGMENT

Segment display mode offers clear and easy-to-read information, making it user-friendly.

Surface Mount: YES

Can be easily mounted on a printed circuit board, optimizing space and assembly efficiency.

Power Supplies (V): 3/5

Compatible with multiple power supply options for flexibility in various applications.

No. of Terminals: 30

Sufficient terminals for connecting to other components in a circuit.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Can also operate in low temperature conditions, increasing its versatility.

Terminal Finish: TIN BISMUTH

Tin Bismuth finish provides good solderability and conductivity for reliable connections.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing efficiency.

Maximum Supply Current: 0.46 mA

Low supply current requirement helps in conserving power and reducing energy costs.

Technical Specifications

Other Function Interface ICs LC75814V-MPB-E attributes and parameters. Explore more Other Function Interface ICs devices from Onsemi

Specs

Display Mode:

SEGMENT

JESD-30 Code:

R-PDSO-G30

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

4

No. of Backplanes:

4-BP

No. of Segments:

16

No. of Terminals:

30

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP30,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Sub-Category:

Other Interface ICs

Maximum Supply Current:

.46 mA

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN BISMUTH

Terminal Form:

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

LC75814V-MPB-E Interface ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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