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FJA4313

Onsemi

FJA4313 by Onsemi

FJA4313 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 230V and max. collector current of 15A. It has a min. DC current gain of 35, making it suitable for amplifier applications at up to 150 °C operating temperature. The package style is flange mount with through-hole terminals in a rectangular shape.

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1k+

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Digiode

USA . 2,091 parts In-Stock

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Vyrian

USA . 2,050 parts In-Stock

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Native Components

USA . 289 parts In-Stock

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$1.070

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289

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Northwest PG Solutions

USA . 2,275 parts In-Stock

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$1.177

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$1.177

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$2.339

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$2.315

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$2.222

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500

$2.339

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 4,947 parts In-Stock

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Problanco Electronics

Mexico . 4,294 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Corphita

USA . 2,654 parts In-Stock

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Kulean Microsystems

USA . 2,478 parts In-Stock

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SupplyDigital Components

Austria . 2,053 parts In-Stock

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Supply Digital

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Corohmni

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UHIMA Technologies

Türkiye . 53 parts In-Stock

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Overview

Power up your projects with the FJA4313 by Onsemi! This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability, making it the perfect choice for amplifier applications. With a maximum collector-emitter voltage of 230V and a maximum collector current of 15A, this NPN transistor delivers exceptional power handling capabilities. Trust in Onsemi's expertise and innovation to bring you a product that exceeds expectations. Upgrade your designs today with the FJA4313!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into existing amplifier setups.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance and efficiency in audio or signal amplification.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and integration into circuit boards or setups.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, ensuring stability and durability in the circuit.

No. of Terminals: 3

Three terminals provide necessary connections for the transistor to function effectively in amplifier circuits.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and heat dissipation, ensuring stable operation at high temperatures.

Minimum DC Current Gain (hFE): 35

Higher DC current gain ensures better amplification performance and signal fidelity in amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures and perform reliably.

Maximum Collector-Emitter Voltage: 230 V

230V maximum collector-emitter voltage allows for higher voltage amplification without risking damage to the transistor.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in amplifier applications, making it a preferred choice for many electronic designs.

Maximum Collector Current (IC): 15 A

With a maximum collector current of 15A, this transistor can handle high power amplification tasks with ease.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and ensures proper alignment and integration in amplifier setups.

Nominal Transition Frequency (fT): 30 MHz

With a nominal transition frequency of 30MHz, this transistor can provide high-frequency amplification suitable for audio or radio signal applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4313 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

230 V

Configuration:

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4313 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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