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FJA4213OTU

Onsemi

FJA4213OTU by Onsemi

FJA4213OTU by Onsemi is a PNP BJT transistor with 130W power dissipation, 250V max collector-emitter voltage, and 30MHz transition frequency. Ideal for amplifier applications, it has a single configuration and operates at up to 150°C.

Median Price

$4.412

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 167 parts In-Stock

1+ parts

$3.880

100+ parts

-

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167

$3.880

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Arrow

USA . 41 parts In-Stock

1+ parts

$3.948

100+ parts

$3.396

1k+ parts

$3.263

10k+ parts

-

41

$3.948

$3.396

$3.263

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Mouser Electronics

USA . 19 parts In-Stock

1+ parts

$5.000

100+ parts

$3.800

1k+ parts

$3.030

10k+ parts

$2.970

19

$5.000

$3.800

$3.030

$2.970

Farnell

UK . 306 parts In-Stock

1+ parts

$5.860

100+ parts

$3.300

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-

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306

$5.860

$3.300

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Element14

Singapore . 307 parts In-Stock

1+ parts

$6.570

100+ parts

$4.120

1k+ parts

$3.960

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-

307

$6.570

$4.120

$3.960

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Rochester

USA . 1,449 parts In-Stock

1+ parts

-

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$3.900

1k+ parts

$3.490

10k+ parts

$3.290

1,449

-

$3.900

$3.490

$3.290

Verical

USA . 851 parts In-Stock

1+ parts

-

100+ parts

$4.875

1k+ parts

$4.625

10k+ parts

-

851

-

$4.875

$4.625

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DigiKey

USA . 401 parts In-Stock

1+ parts

-

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$2.990

10k+ parts

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401

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$2.990

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,255 parts In-Stock

1+ parts

$1.239

100+ parts

-

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2,255

$1.239

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Vyrian

USA . 2,007 parts In-Stock

1+ parts

$1.304

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-

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2,007

$1.304

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Flip Electronics

USA . 401 parts In-Stock

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401

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Cyclops Electronics Ltd

UK . 188 parts In-Stock

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188

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Distributors (Availability)

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.798

100+ parts

$0.726

1k+ parts

$0.654

10k+ parts

-

500

$0.798

$0.726

$0.654

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Ampacity Inc.

Singapore . 2 parts In-Stock

1+ parts

$1.110

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2

$1.110

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-

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Corphita

USA . 420 parts In-Stock

1+ parts

$1.174

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420

$1.174

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Corohmni

South Africa . 377 parts In-Stock

1+ parts

$1.304

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377

$1.304

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Native Components

USA . 316 parts In-Stock

1+ parts

$1.490

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316

$1.490

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Northwest PG Solutions

USA . 923 parts In-Stock

1+ parts

$1.639

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923

$1.639

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Continental Prestige Electronics

USA . 405 parts In-Stock

1+ parts

$5.060

100+ parts

$2.950

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-

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405

$5.060

$2.950

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QUARKTWIN TECHNOLOGY LTD

USA . 8,259 parts In-Stock

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8,259

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Kulean Microsystems

USA . 6,595 parts In-Stock

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6,595

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Problanco Electronics

Mexico . 5,687 parts In-Stock

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5,687

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A-Z Elektronik GmbH

Germany . 5,061 parts In-Stock

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5,061

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Microchip USA

USA . 5,057 parts In-Stock

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5,057

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Alle Elektronik GmbH

Germany . 3,374 parts In-Stock

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3,374

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Supply Digital

USA . 1,392 parts In-Stock

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1,392

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Perfect Parts

USA . 1,017 parts In-Stock

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 821 parts In-Stock

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821

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SupplyDigital Components

Austria . 459 parts In-Stock

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459

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TANS Electronics

Latvia . 216 parts In-Stock

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216

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GreenTree Electronics

Israel . 154 parts In-Stock

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154

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Overview

Unlock the power of innovation with the FJA4213OTU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for amplifier applications, this PNP transistor offers a maximum collector-emitter voltage of 250V and a maximum collector current of 17A, providing unmatched performance and efficiency. Trust Onsemi to provide you with a product that exceeds expectations, offering unparalleled value and benefits to help you stay ahead in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and power control circuits, making this product suitable for such applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate this transistor into a system.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in audio or signal amplification circuits.

Maximum Power Dissipation (Abs): 130 W

Capable of handling high power levels, making it suitable for applications that require a high power dissipation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and mounting on circuit boards or heat sinks.

No. of Terminals: 3

Simplifies circuit connections and reduces the risk of wiring errors.

Maximum Collector Current (IC): 17 A

Capable of handling high current levels, making it suitable for power control applications.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for high-speed switching, making this transistor suitable for applications that require fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4213OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4213OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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