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FJA4310Y

Onsemi

FJA4310Y by Onsemi

FJA4310Y by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, IC of 10A, and Ptot of 100W. Ideal for amplifier applications due to its high hFE of 90 and fT of 30MHz. Package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,557 parts In-Stock

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Digiode

USA . 1,000 parts In-Stock

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Native Components

USA . 331 parts In-Stock

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$5.475

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TANS Electronics

Latvia . 6,500 parts In-Stock

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Kulean Microsystems

USA . 6,274 parts In-Stock

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Supply Digital

USA . 2,726 parts In-Stock

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SupplyDigital Components

Austria . 2,009 parts In-Stock

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Corphita

USA . 1,711 parts In-Stock

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Northwest PG Solutions

USA . 1,232 parts In-Stock

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$5.365

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Problanco Electronics

Mexico . 1,081 parts In-Stock

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UHIMA Technologies

Türkiye . 822 parts In-Stock

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Corohmni

South Africa . 298 parts In-Stock

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Overview

Unleash the power of innovation with the FJA4310Y by Onsemi, a high-quality Power BJT designed to amplify your projects to new heights. With Onsemi's reputation for excellence in semiconductor manufacturing, this NPN transistor offers unparalleled performance and reliability. Ideal for amplifier applications, this product boasts a maximum VCEsat of 0.5V and a maximum collector current of 10A, ensuring optimal functionality. Say goodbye to limitations and hello to endless possibilities with the FJA4310Y - your key to unlocking the full potential of your electronics projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and installation, making it convenient for users.

Maximum VCEsat: 0.5 V

Low VCEsat value indicates minimal power loss and high efficiency in operation.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient PCB mounting and compact designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections, making it reliable in various applications.

Maximum Power Dissipation (Abs): 100 W

High power dissipation capability allows for handling high power applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers easy mounting and heat dissipation, enhancing overall performance.

Minimum DC Current Gain (hFE): 90

A high minimum DC current gain ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 140 V

High VCE voltage rating allows for handling high voltage applications without breakdown.

Transistor Element Material: SILICON

Silicon material offers reliable and stable performance in various operating conditions.

Maximum Collector Current (IC): 10 A

High collector current rating enables handling of high current loads in circuits.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection in circuits.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for high-speed switching and amplification in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4310Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJA4310Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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