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FJA4210OTU

Onsemi

FJA4210OTU by Onsemi

FJA4210OTU by Onsemi is a PNP power BJT with 100W max power dissipation, 140V max collector-emitter voltage, and 10A max collector current. Ideal for amplifier applications, it has a min hFE of 70 and operates up to 150 °C.

Median Price

$1.980

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 270 parts In-Stock

1+ parts

$3.940

100+ parts

$2.163

1k+ parts

$1.771

10k+ parts

-

270

$3.940

$2.163

$1.771

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Flip Electronics (Authorized)

USA . 370 parts In-Stock

1+ parts

-

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370

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RS (Exports)

UK . 350 parts In-Stock

1+ parts

-

100+ parts

$2.272

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350

-

$2.272

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Rochester

USA . 289 parts In-Stock

1+ parts

-

100+ parts

$1.510

1k+ parts

$1.350

10k+ parts

$1.270

289

-

$1.510

$1.350

$1.270

Verical

USA . 289 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.688

10k+ parts

$1.587

289

-

-

$1.688

$1.587

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 914 parts In-Stock

1+ parts

$1.606

100+ parts

-

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914

$1.606

-

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Vyrian

USA . 2,714 parts In-Stock

1+ parts

$1.690

100+ parts

-

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2,714

$1.690

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Flip Electronics

USA . 370 parts In-Stock

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370

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ComSIT Distribution GmbH

Germany . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,640 parts In-Stock

1+ parts

$1.521

100+ parts

-

1k+ parts

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1,640

$1.521

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Corohmni

South Africa . 182 parts In-Stock

1+ parts

$1.690

100+ parts

-

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182

$1.690

-

-

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Andel Nordic

Denmark . 623 parts In-Stock

1+ parts

$1.780

100+ parts

-

1k+ parts

$1.709

10k+ parts

$1.709

623

$1.780

-

$1.709

$1.709

Native Components

USA . 538 parts In-Stock

1+ parts

$1.820

100+ parts

-

1k+ parts

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538

$1.820

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Northwest PG Solutions

USA . 515 parts In-Stock

1+ parts

$2.002

100+ parts

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515

$2.002

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A-Z Elektronik GmbH

Germany . 4,964 parts In-Stock

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4,964

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SupplyDigital Components

Austria . 4,470 parts In-Stock

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4,470

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Microchip USA

USA . 4,238 parts In-Stock

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4,238

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Problanco Electronics

Mexico . 3,720 parts In-Stock

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3,720

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TANS Electronics

Latvia . 3,422 parts In-Stock

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3,422

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Alle Elektronik GmbH

Germany . 3,309 parts In-Stock

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3,309

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Kulean Microsystems

USA . 1,443 parts In-Stock

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1,443

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Supply Digital

USA . 1,412 parts In-Stock

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1,412

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 959 parts In-Stock

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959

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UHIMA Technologies

Türkiye . 418 parts In-Stock

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418

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Allen Electronics Distributors

USA . 390 parts In-Stock

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390

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Overview

Enhance your electronic projects with the high-quality FJA4210OTU power bipolar junction transistor from Onsemi. Designed for amplifier applications, this PNP transistor offers a maximum collector current of 10A and a maximum power dissipation of 100W, providing reliable performance in demanding environments. With a minimum DC current gain of 70 and a nominal transition frequency of 30MHz, this transistor is ideal for a wide range of applications. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the FJA4210OTU brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and less prone to damage during handling or installation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifiers and switching applications, making this transistor suitable for various electronic circuits.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and efficiency in amplification circuits.

Maximum Power Dissipation (Abs): 100 W

With a high power dissipation capacity, this transistor can handle high levels of power without overheating, making it reliable in demanding applications.

Maximum Collector-Emitter Voltage: 140 V

The high collector-emitter voltage rating allows this transistor to be used in circuits with higher voltage requirements, increasing its versatility.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4210OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4210OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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