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FJA4310

Onsemi

FJA4310 by Onsemi

FJA4310 by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, IC of 10A, and Ptot of 100W. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150 °C, making it suitable for high-power amplification needs.

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Lifecycle Status

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3

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1k+

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Vyrian

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Digiode

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Prism Electronics

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SupplyDigital Components

Austria . 4,873 parts In-Stock

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TANS Electronics

Latvia . 3,926 parts In-Stock

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Glotronic Ltd.

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Problanco Electronics

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Corphita

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Kulean Microsystems

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Authorized Procurement Solutions

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Native Components

USA . 950 parts In-Stock

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Supply Digital

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Northwest PG Solutions

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South Africa . 230 parts In-Stock

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Overview

Power up your projects with the FJA4310 by Onsemi! As a leading manufacturer of Power Bipolar Junction Transistors, Onsemi guarantees top-notch quality and reliability. This NPN transistor is ideal for amplifier applications, providing a maximum collector current of 10A and a minimum DC current gain of 50. With a low VCEsat of 0.5V, this transistor offers excellent performance while maximizing power efficiency. Whether you're designing audio amplifiers or power supplies, the FJA4310 delivers the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits due to their positive-negative-positive configuration.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring optimal performance in such applications.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss and improves efficiency in operation.

Package Shape: RECTANGULAR

Facilitates easy mounting and handling during installation.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections in through-hole PCB designs.

Maximum Power Dissipation (Abs): 100 W

Capable of handling high power dissipation, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for convenient mounting and positioning in different systems.

Minimum DC Current Gain (hFE): 50

Ensures stable and consistent amplification characteristics across different operating conditions.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliable performance in challenging environments.

Maximum Collector-Emitter Voltage: 140 V

Supports higher voltage applications without risking damage to the transistor.

Transistor Element Material: SILICON

Utilizes reliable and widely used silicon material for the transistor element.

Maximum Collector Current (IC): 10 A

Capable of handling high collector currents for demanding applications.

Terminal Position: SINGLE

Simplifies connection and installation process by having all terminals in a single position.

Nominal Transition Frequency (fT): 30 MHz

Suitable for high-frequency applications where fast switching is required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4310 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJA4310 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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