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FJA4213RTU

Onsemi

FJA4213RTU by Onsemi

FJA4213RTU by Onsemi is a PNP Power BJT with 250V VCEO, 17A IC, and 130W Ptot. Ideal for amplifier applications, it has a hFE of 55, operates up to 150°C, and features a flange mount package style.

Median Price

$2.750

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,062 parts In-Stock

1+ parts

-

100+ parts

$2.460

1k+ parts

$2.200

10k+ parts

$2.070

1,062

-

$2.460

$2.200

$2.070

DigiKey

USA . 1,062 parts In-Stock

1+ parts

-

100+ parts

$3.240

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1,062

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$3.240

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Flip Electronics (Authorized)

USA . 900 parts In-Stock

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900

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Verical

USA . 627 parts In-Stock

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$2.750

10k+ parts

$2.587

627

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$2.750

$2.587

Distributors (In-Stock)

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Digiode

USA . 2,867 parts In-Stock

1+ parts

$2.603

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2,867

$2.603

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Vyrian

USA . 2,768 parts In-Stock

1+ parts

$2.740

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2,768

$2.740

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Flip Electronics

USA . 900 parts In-Stock

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900

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Distributors (Availability)

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Corphita

USA . 251 parts In-Stock

1+ parts

$2.466

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-

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251

$2.466

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Corohmni

South Africa . 464 parts In-Stock

1+ parts

$2.740

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464

$2.740

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Component Stockers USA

USA . 96 parts In-Stock

1+ parts

$2.830

100+ parts

$2.670

1k+ parts

$2.410

10k+ parts

-

96

$2.830

$2.670

$2.410

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Microchip USA

USA . 3,030 parts In-Stock

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$17.095

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3,030

$17.095

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QUARKTWIN TECHNOLOGY LTD

USA . 16,066 parts In-Stock

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Problanco Electronics

Mexico . 7,610 parts In-Stock

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SupplyDigital Components

Austria . 7,386 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,280 parts In-Stock

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TANS Electronics

Latvia . 5,989 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,853 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Northwest PG Solutions

USA . 1,819 parts In-Stock

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$3.285

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$3.285

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Kulean Microsystems

USA . 1,632 parts In-Stock

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1,632

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Native Components

USA . 989 parts In-Stock

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$3.251

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989

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$3.251

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UHIMA Technologies

Türkiye . 184 parts In-Stock

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184

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Supply Digital

USA . 103 parts In-Stock

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103

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Overview

Unleash the power and reliability of Onsemi with the FJA4213RTU Power Bipolar Junction Transistor. Designed for amplifier applications, this PNP transistor offers a maximum collector-emitter voltage of 250V and a maximum collector current of 17A, making it perfect for high-power projects. With a package style of flange mount and a robust construction of plastic/epoxy, this transistor provides superior performance and durability. Trust Onsemi's reputation for quality and innovation and experience the benefits of seamless connectivity and enhanced efficiency with the FJA4213RTU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing flexibility in circuit design.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Specifically designed for use in amplifier circuits, ensuring optimal performance.

Maximum Power Dissipation (Abs): 130 W

Can handle high power levels, making it suitable for demanding applications.

Terminal Form: THROUGH-HOLE

Easily mountable on circuit boards, facilitating assembly and maintenance.

Maximum Collector-Emitter Voltage: 250 V

Can withstand high voltage levels, expanding the range of potential applications.

Maximum Collector Current (IC): 17 A

Capable of handling high current levels, making it suitable for power applications.

Nominal Transition Frequency (fT): 30 MHz

Provides high frequency response, making it suitable for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4213RTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

55

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4213RTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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