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FJA4310R

Onsemi

FJA4310R by Onsemi

FJA4310R by Onsemi is a NPN Power BJT with 140V VCE, 10A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a max power dissipation of 100W and operates up to 150 °C. This single configuration transistor in PLASTIC/EPOXY package is suitable for high-power amplification needs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,501 parts In-Stock

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Vyrian

USA . 1,828 parts In-Stock

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Native Components

USA . 61 parts In-Stock

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$526.957

100+ parts

$516.417

1k+ parts

$511.148

10k+ parts

$505.878

61

$526.957

$516.417

$511.148

$505.878

Northwest PG Solutions

USA . 35 parts In-Stock

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$579.652

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SupplyDigital Components

Austria . 5,735 parts In-Stock

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Problanco Electronics

Mexico . 2,149 parts In-Stock

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TANS Electronics

Latvia . 1,610 parts In-Stock

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Kulean Microsystems

USA . 1,298 parts In-Stock

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Supply Digital

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Corphita

USA . 766 parts In-Stock

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UHIMA Technologies

Türkiye . 503 parts In-Stock

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Corohmni

South Africa . 496 parts In-Stock

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Overview

Enhance your amplifier designs with the FJA4310R from Onsemi, a leading manufacturer known for its high-quality Power Bipolar Junction Transistors. This NPN transistor offers a maximum VCEsat of 0.5V and a maximum Collector Current of 10A, ensuring top-notch performance in various applications. With a robust design and superior characteristics, this transistor provides exceptional value and reliability to customers looking to amplify their electronic circuits efficiently. Upgrade your projects with the FJA4310R and experience top-tier performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, offering high efficiency and low noise operation.

Configuration: SINGLE

Simplified design with only one transistor, making it easier to integrate into circuits and reducing complexity.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring high gain and low distortion in audio or signal amplification.

Maximum VCEsat: 0.5 V

Low saturation voltage results in reduced power losses and improved efficiency in amplifier circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic devices and PCB layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide secure connections in circuit boards for stable operation.

No. of Terminals: 3

Simple 3-terminal design for easy connectivity and integration into circuit layouts.

Maximum Power Dissipation (Abs): 100 W

High power dissipation capability makes it suitable for applications that require handling significant power loads.

Package Style (Meter): FLANGE MOUNT

Flange mount package allows for secure mounting and heat dissipation, enhancing the overall performance and reliability.

Minimum DC Current Gain (hFE): 50

High DC current gain ensures stable and consistent amplification performance in various operating conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range enables reliable operation in various environmental conditions without performance degradation.

Maximum Collector-Emitter Voltage: 140 V

High voltage rating allows for handling higher voltage levels without risking damage to the transistor.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability in amplification applications, ensuring long-term performance.

Maximum Collector Current (IC): 10 A

High collector current rating allows for handling larger current loads in amplifier circuits with consistent performance.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces the chance of errors during installation.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency enables fast response times in amplification applications, ensuring accurate signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4310R attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJA4310R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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