Loading...

FJA4210

Onsemi

FJA4210 by Onsemi

FJA4210 by Onsemi is a PNP BJT transistor with 140V VCE, 10A IC, and 30MHz fT. Ideal for amplifier applications, it has a single configuration in a plastic/epoxy package with through-hole terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,087 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,087

-

-

-

-

Vyrian

USA . 2,075 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,075

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 140 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

-

10k+ parts

-

140

$1.961

-

-

-

Northwest PG Solutions

USA . 307 parts In-Stock

1+ parts

$2.157

100+ parts

-

1k+ parts

-

10k+ parts

-

307

$2.157

-

-

-

TANS Electronics

Latvia . 4,398 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,398

-

-

-

-

SupplyDigital Components

Austria . 2,789 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,789

-

-

-

-

Problanco Electronics

Mexico . 1,613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,613

-

-

-

-

Kulean Microsystems

USA . 1,527 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,527

-

-

-

-

Corphita

USA . 1,179 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,179

-

-

-

-

UHIMA Technologies

Türkiye . 746 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

746

-

-

-

-

Corohmni

South Africa . 197 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

197

-

-

-

-

Supply Digital

USA . 107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

107

-

-

-

-

Overview

Upgrade your electronics with the FJA4210 by Onsemi, a high-quality Power Bipolar Junction Transistor designed for amplifier applications. With a maximum collector-emitter voltage of 140V and a collector current of 10A, this PNP transistor offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this single configuration transistor provides value and benefits that exceed expectations. Experience the advantages of using the FJA4210 in your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the product lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for high current flow and is commonly used in audio amplification circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and offers ease of use.

Transistor Application: AMPLIFIER

Designed for amplifier applications, making it ideal for audio and radio frequency amplification.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and integration into circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure connections and ease of soldering, making installation convenient.

No. of Terminals: 3

3 terminals provide the necessary connections for the transistor to function effectively.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting in place, ensuring stability in operation.

Minimum DC Current Gain (hFE): 50

Minimum DC current gain of 50 ensures consistent and stable amplification of signals.

Maximum Collector-Emitter Voltage: 140 V

High maximum collector-emitter voltage rating of 140 V allows for versatile use in different voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, essential for long-term usage.

Maximum Collector Current (IC): 10 A

High maximum collector current rating of 10 A enables handling of larger currents without overheating or damage.

Terminal Position: SINGLE

Single terminal position simplifies circuit connections and reduces the chance of errors during installation.

Nominal Transition Frequency (fT): 30 MHz

Nominal transition frequency of 30 MHz allows for efficient high-frequency signal amplification.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4210 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4210 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20