Loading...

FJA4310O

Onsemi

FJA4310O by Onsemi

FJA4310O by Onsemi is a NPN BJT transistor with max VCEsat of 0.5V, IC of 10A, and Ptot of 100W. Ideal for amplifier applications due to its single configuration and silicon element material. Operates at up to 150 °C, making it suitable for high-power amplification needs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,979 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,979

-

-

-

-

Digiode

USA . 2,789 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,789

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 5,867 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,867

-

-

-

-

TANS Electronics

Latvia . 4,188 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,188

-

-

-

-

SupplyDigital Components

Austria . 3,076 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,076

-

-

-

-

Supply Digital

USA . 2,738 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,738

-

-

-

-

Authorized Procurement Solutions

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

Corphita

USA . 2,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,678

-

-

-

-

Northwest PG Solutions

USA . 1,208 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.285

10k+ parts

-

1,208

-

-

$3.285

-

Problanco Electronics

Mexico . 808 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

808

-

-

-

-

UHIMA Technologies

Türkiye . 626 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

626

-

-

-

-

Native Components

USA . 449 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.251

10k+ parts

-

449

-

-

$3.251

-

Corohmni

South Africa . 295 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

295

-

-

-

-

Metaverse IC Inc.

Canada . 130 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

130

-

-

-

-

Overview

Experience unparalleled performance with the FJA4310O by Onsemi, a top-tier manufacturer known for delivering high-quality Power Bipolar Junction Transistors. Ideal for amplifier applications, this NPN transistor offers a maximum VCEsat of just 0.5V, ensuring efficient operation and reliable performance. With a maximum power dissipation of 100W and a maximum collector current of 10A, this transistor is designed to meet your power needs with ease. Trust Onsemi to provide you with the best-in-class components for your projects, offering unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors have high electron mobility and fast switching speeds, making them ideal for amplifying signals.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easy to use and integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, ensuring optimal performance in amplifier circuits.

Maximum VCEsat: 0.5 V

Low VCEsat reduces power dissipation and increases efficiency in the amplifier circuit.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and compact placement in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide stable connections and easy soldering on the circuit board.

Maximum Power Dissipation (Abs): 100 W

High power dissipation capability allows for handling high power applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and ease of mounting in equipment.

Minimum DC Current Gain (hFE): 70

High DC current gain ensures stable and consistent amplification of signals across different conditions.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 140 V

High collector-emitter voltage rating allows for handling higher voltages in the amplifier circuit.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in the transistor element.

Maximum Collector Current (IC): 10 A

High collector current rating allows for handling high current loads in the amplifier circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and ensures easy connectivity.

Nominal Transition Frequency (fT): 30 MHz

High transition frequency allows for fast switching speeds and high-frequency operation in the amplifier circuit.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4310O attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

FJA4310O Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20