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FJA4210Y

Onsemi

FJA4210Y by Onsemi

FJA4210Y by Onsemi is a PNP Power BJT with max. Vce of 140V and max. Ic of 10A. With hFE of 90, it's ideal for amplifier applications due to its silicon element material and fT of 30MHz.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 3,092 parts In-Stock

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Vyrian

USA . 2,813 parts In-Stock

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Native Components

USA . 396 parts In-Stock

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$1.490

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Northwest PG Solutions

USA . 2,307 parts In-Stock

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$1.639

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TANS Electronics

Latvia . 7,201 parts In-Stock

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Kulean Microsystems

USA . 3,810 parts In-Stock

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Corphita

USA . 2,686 parts In-Stock

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SupplyDigital Components

Austria . 2,258 parts In-Stock

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Problanco Electronics

Mexico . 1,431 parts In-Stock

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Corohmni

South Africa . 494 parts In-Stock

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UHIMA Technologies

Türkiye . 417 parts In-Stock

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Supply Digital

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Overview

Unlock the power of innovative technology with the Onsemi FJA4210Y Power BJT. Crafted by industry leaders in semiconductor manufacturing, this PNP transistor offers unparalleled performance in amplifier applications. With a maximum collector-emitter voltage of 140V and a minimum DC current gain of 90, this transistor provides high reliability and efficiency. Whether you're designing audio amplifiers or voltage regulators, the FJA4210Y delivers exceptional quality and value that will elevate your projects to new heights. Choose Onsemi for cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, ideal for portable or mobile applications.

Polarity or Channel Type: PNP

PNP transistors are suitable for high-side switching applications and can be easily integrated into existing circuits.

Configuration: SINGLE

Single configuration simplifies circuit design, making it easier to implement in various amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and handling, making it suitable for production and assembly processes.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and are convenient for manual soldering or prototyping.

No. of Terminals: 3

With three terminals, the transistor offers flexibility in circuit connections and applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables efficient heat dissipation and mechanical stability, enhancing overall reliability.

Minimum DC Current Gain (hFE): 90

A high minimum DC current gain ensures consistent and reliable amplification of signals.

Maximum Collector-Emitter Voltage: 140 V

High maximum collector-emitter voltage rating allows for robust and reliable operation in various voltage conditions.

Transistor Element Material: SILICON

Silicon material ensures high performance, low leakage, and reliable operation over a wide temperature range.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10 A, the transistor can handle high current loads with ease.

Terminal Position: SINGLE

Single terminal position simplifies circuit connection and layout, making it easier to integrate into existing designs.

Nominal Transition Frequency (fT): 30 MHz

High nominal transition frequency enables the transistor to handle high-frequency signals with minimal distortion.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4210Y attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

140 V

Configuration:

Minimum DC Current Gain (hFE):

90

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4210Y Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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