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FJA4313OTU

Onsemi

FJA4313OTU by Onsemi

FJA4313OTU by Onsemi is a NPN Power BJT with 250V VCE, 17A IC, and 130W Ptot. Ideal for amplifier applications, it has a hFE of 80, operates up to 150°C, and features a flange mount package style.

Median Price

$4.550

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 29 parts In-Stock

1+ parts

$4.550

100+ parts

-

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-

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29

$4.550

-

-

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Mouser Electronics

USA . 877 parts In-Stock

1+ parts

$5.290

100+ parts

$2.470

1k+ parts

$2.180

10k+ parts

-

877

$5.290

$2.470

$2.180

-

DigiKey

USA . 415 parts In-Stock

1+ parts

$5.290

100+ parts

$2.972

1k+ parts

$2.461

10k+ parts

-

415

$5.290

$2.972

$2.461

-

Element14

Singapore . 29 parts In-Stock

1+ parts

$7.660

100+ parts

$3.560

1k+ parts

$3.420

10k+ parts

-

29

$7.660

$3.560

$3.420

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Verical

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$4.348

1k+ parts

-

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450

-

$4.348

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Master Electronics

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$3.370

1k+ parts

$2.860

10k+ parts

-

450

-

$3.370

$2.860

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Rochester

USA . 19 parts In-Stock

1+ parts

-

100+ parts

$1.980

1k+ parts

$1.770

10k+ parts

$1.660

19

-

$1.980

$1.770

$1.660

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 527 parts In-Stock

1+ parts

$2.080

100+ parts

-

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527

$2.080

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Vyrian

USA . 1,182 parts In-Stock

1+ parts

$2.190

100+ parts

-

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1,182

$2.190

-

-

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IBS Electronics

USA . 450 parts In-Stock

1+ parts

-

100+ parts

$4.726

1k+ parts

$4.011

10k+ parts

-

450

-

$4.726

$4.011

-

Flip Electronics

USA . 285 parts In-Stock

1+ parts

-

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285

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Chip Stock

USA . 218 parts In-Stock

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218

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NAC Semi

USA . 120 parts In-Stock

1+ parts

-

100+ parts

$3.310

1k+ parts

$3.070

10k+ parts

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120

-

$3.310

$3.070

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 409 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

$0.037

409

$0.039

-

-

$0.037

Corphita

USA . 2,275 parts In-Stock

1+ parts

$1.971

100+ parts

-

1k+ parts

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2,275

$1.971

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Corohmni

South Africa . 286 parts In-Stock

1+ parts

$2.190

100+ parts

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286

$2.190

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Continental Prestige Electronics

USA . 208 parts In-Stock

1+ parts

$2.390

100+ parts

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208

$2.390

-

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Andel Nordic

Denmark . 3,282 parts In-Stock

1+ parts

$4.564

100+ parts

-

1k+ parts

$4.382

10k+ parts

$4.382

3,282

$4.564

-

$4.382

$4.382

Microchip USA

USA . 4,005 parts In-Stock

1+ parts

$26.325

100+ parts

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4,005

$26.325

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QUARKTWIN TECHNOLOGY LTD

USA . 16,011 parts In-Stock

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Kulean Microsystems

USA . 6,172 parts In-Stock

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6,172

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TANS Electronics

Latvia . 6,161 parts In-Stock

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6,161

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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SupplyDigital Components

Austria . 3,687 parts In-Stock

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3,687

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Supply Digital

USA . 2,054 parts In-Stock

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2,054

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Northwest PG Solutions

USA . 1,073 parts In-Stock

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1,073

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Perfect Parts

USA . 1,006 parts In-Stock

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1,006

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Problanco Electronics

Mexico . 680 parts In-Stock

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680

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UHIMA Technologies

Türkiye . 403 parts In-Stock

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403

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Authorized Procurement Solutions

USA . 150 parts In-Stock

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150

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Eastek

USA . 150 parts In-Stock

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150

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Overview

Power up your projects with the FJA4313OTU Power Bipolar Junction Transistor by Onsemi. Manufactured with precision and expertise, this NPN transistor offers unparalleled performance for amplifier applications. With a maximum power dissipation of 130W and a maximum collector-emitter voltage of 250V, this transistor ensures reliable and efficient operation. Whether you're working on audio amplifiers or motor control systems, the FJA4313OTU delivers the quality and durability you need. Trust Onsemi to provide top-of-the-line components for all your power transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN

Allows for use in amplification circuits and compatibility with other NPN components.

Configuration: SINGLE

Simplified design and ease of integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in such uses.

Maximum Power Dissipation (Abs): 130 W

Capable of handling high power levels, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it reliable in various operating conditions.

Maximum Collector-Emitter Voltage: 250 V

Suitable for applications requiring higher voltage levels for efficient performance.

Maximum Collector Current (IC): 17 A

Capable of handling high currents, making it suitable for power applications.

Nominal Transition Frequency (fT): 30 MHz

Higher frequency capability allows for use in high-speed circuitry and communication systems.

Technical Specifications

Power Bipolar Junction Transistors (BJT) FJA4313OTU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

FJA4313OTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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