Loading...

BD802

Onsemi

BD802 by Onsemi

BD802 by Onsemi is a PNP BJT transistor with 65W power dissipation, 100V max collector-emitter voltage, and 8A max collector current. Ideal for amplifier applications, it operates b/w -55 to 150 °C with a min DC current gain of 15 (hFE).

Median Price

-

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 2,914 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,914

-

-

-

-

Digiode

USA . 1,569 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,569

-

-

-

-

ComSIT USA

USA . 1,483 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,483

-

-

-

-

Anansix

USA . 1,012 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,012

-

-

-

-

Standard Data Resources

USA . 267 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

267

-

-

-

-

Vyrian

USA . 185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

185

-

-

-

-

ECAB

Sweden . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

LittleDiode

UK . 18 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,601 parts In-Stock

1+ parts

$2.419

100+ parts

-

1k+ parts

-

10k+ parts

-

1,601

$2.419

-

-

-

Kulean Microsystems

USA . 5,602 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,602

-

-

-

-

Problanco Electronics

Mexico . 5,547 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,547

-

-

-

-

SupplyDigital Components

Austria . 4,850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,850

-

-

-

-

TANS Electronics

Latvia . 1,251 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,251

-

-

-

-

Native Components

USA . 848 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.133

10k+ parts

-

848

-

-

$2.133

-

Supply Digital

USA . 683 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

683

-

-

-

-

Assy Fe

Spain . 539 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

539

-

-

-

-

Corphita

USA . 430 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

430

-

-

-

-

UHIMA Technologies

Türkiye . 361 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

361

-

-

-

-

Corohmni

South Africa . 294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

294

-

-

-

-

Perfect Parts

USA . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4

-

-

-

-

Cyclops Electronics Ltd (Excess)

UK . 2 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2

-

-

-

-

Overview

Unleash the power of innovation with the BD802 by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for high-performance applications. With a maximum power dissipation of 65 W and a collector-emitter voltage of 100 V, this PNP transistor delivers unparalleled reliability and efficiency. Whether you're amplifying signals or enhancing circuit performance, the BD802 offers superior quality and precision engineering that meets the highest industry standards. Elevate your projects to new heights with this cutting-edge transistor that ensures optimal functionality and durability. Experience the difference with Onsemi's BD802 - where excellence meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package durable and resistant to external factors, ensuring the reliability of the transistor in various environments.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits and compatibility with other components, making it a versatile choice for amplifier applications.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces complexity, making it easier to use and integrate in various applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high performance and reliability in amplifying signals effectively.

Maximum Power Dissipation (Abs): 65 W

With a high maximum power dissipation, this transistor can handle large power loads without overheating or damage, ensuring stable operation even under heavy loads.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to be used in a wide range of applications and environments without the risk of overheating or performance degradation.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating ensures the transistor can handle high voltage levels, making it suitable for a variety of power applications.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain ensures consistent amplification of signals, providing reliable performance in amplification circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD802 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD802 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20