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BD801BA

Onsemi

BD801BA by Onsemi

The Onsemi BD801BA is a NPN BJT transistor with 100V VCE, 8A IC, and 15 min hFE. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 3MHz. The through-hole package has a flange mount style and tin-lead finish.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,133 parts In-Stock

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Vyrian

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Kulean Microsystems

USA . 6,502 parts In-Stock

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SupplyDigital Components

Austria . 4,886 parts In-Stock

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Problanco Electronics

Mexico . 3,462 parts In-Stock

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Northwest PG Solutions

USA . 1,280 parts In-Stock

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TANS Electronics

Latvia . 935 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 677 parts In-Stock

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Corohmni

South Africa . 287 parts In-Stock

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Native Components

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Overview

Enhance your electronic projects with the BD801BA power transistor by Onsemi. Manufactured with superior quality and precision, this NPN transistor offers exceptional performance in amplifier applications. Its flange mount package design ensures easy installation and reliable operation. With a maximum collector current of 8A and a transition frequency of 3MHz, this transistor delivers optimal efficiency and power handling capabilities. Trust Onsemi's expertise in semiconductor manufacturing to bring you a product that guarantees value, reliability, and performance. Upgrade your designs today with the BD801BA.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight housing for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single transistor configuration makes it easy to incorporate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering.

No. of Terminals: 3

Simple 3-terminal configuration for easy integration into circuit designs.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting in electronic devices.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

Can operate at temperatures up to 150 °C, suitable for a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 100 V

Supports a maximum voltage of 100V, making it suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor.

Maximum Collector Current (IC): 8 A

Capable of handling a maximum collector current of 8A, ideal for applications requiring high current capabilities.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures reliable connections and soldering.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and integration.

Case Connection: COLLECTOR

Collector case connection provides secure grounding and efficient heat dissipation.

Nominal Transition Frequency (fT): 3 MHz

Nominal transition frequency of 3 MHz ensures stable performance in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801BA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801BA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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