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BD801AN

Onsemi

BD801AN by Onsemi

The Onsemi BD801AN is a NPN BJT transistor with 100V VCE, 8A IC, and 15 min hFE. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 3MHz. The through-hole package has a flange mount style and tin-lead finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,303 parts In-Stock

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Digiode

USA . 1,654 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 311 parts In-Stock

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$0.949

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311

$0.949

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Northwest PG Solutions

USA . 165 parts In-Stock

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$1.044

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SupplyDigital Components

Austria . 5,496 parts In-Stock

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Kulean Microsystems

USA . 4,127 parts In-Stock

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Corphita

USA . 2,343 parts In-Stock

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Problanco Electronics

Mexico . 1,931 parts In-Stock

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TANS Electronics

Latvia . 526 parts In-Stock

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UHIMA Technologies

Türkiye . 153 parts In-Stock

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Corohmni

South Africa . 96 parts In-Stock

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Overview

Enhance your electronic projects with the BD801AN by Onsemi, a high-quality Power Bipolar Junction Transistor that delivers exceptional performance and reliability. Manufactured by Onsemi, a renowned leader in semiconductor technology, this NPN transistor is perfect for amplifier applications. Its flange mount package body material ensures durability, while its maximum collector-emitter voltage of 100V and maximum collector current of 8A provide ample power for your designs. Trust Onsemi's expertise and choose the BD801AN for all your transistor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and reliability of the transistor.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration with other NPN transistors in a circuit, making it versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use for amplification purposes.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and handling of the transistor in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during circuit assembly.

No. of Terminals: 3

Having 3 terminals allows for simplified connection in circuits, reducing complexity in wiring.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides stability and secure mounting of the transistor in electronic devices.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures reliable amplification of input signals for efficient performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, the transistor can withstand high temperatures for extended periods.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage of 100V allows for the transistor to handle higher voltages in the circuit.

Transistor Element Material: SILICON

Silicon material in the transistor element ensures high performance and reliability in electronic applications.

Maximum Collector Current (IC): 8 A

With a maximum collector current of 8A, this transistor can handle high current loads in circuits without overheating.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity for reliable connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies the soldering and connection process, making it user-friendly for circuit integration.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation and safe operation of the transistor in the circuit.

Nominal Transition Frequency (fT): 3 MHz

With a nominal transition frequency of 3MHz, this transistor can switch signals at a high frequency for fast operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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