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BD801AF

Onsemi

BD801AF by Onsemi

The Onsemi BD801AF is a NPN BJT transistor with 100V VCE, 8A IC, and 15 min hFE. It is used as an amplifier in various applications due to its silicon element material and 3MHz fT for high-frequency performance. The package style is flange mount with through-hole terminals for easy installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,222 parts In-Stock

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Vyrian

USA . 179 parts In-Stock

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179

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TANS Electronics

Latvia . 5,558 parts In-Stock

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Problanco Electronics

Mexico . 2,239 parts In-Stock

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Corphita

USA . 1,815 parts In-Stock

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SupplyDigital Components

Austria . 1,372 parts In-Stock

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Kulean Microsystems

USA . 1,180 parts In-Stock

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Native Components

USA . 658 parts In-Stock

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$3.685

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658

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UHIMA Technologies

Türkiye . 465 parts In-Stock

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Corohmni

South Africa . 186 parts In-Stock

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Northwest PG Solutions

USA . 131 parts In-Stock

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$3.723

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$3.723

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Overview

Enhance your electronic projects with the BD801AF by Onsemi! Manufactured by a trusted industry leader, this Power BJT offers unparalleled quality and reliability. Ideal for amplifier applications, this NPN transistor boasts a high collector current of 8A and a maximum voltage of 100V. With a minimum DC current gain of 15, the BD801AF ensures optimal performance. Upgrade your designs with this versatile component that delivers exceptional value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: RECTANGULAR

Easily fits into standard electrical circuit layouts.

Terminal Form: THROUGH-HOLE

Facilitates easy mounting and soldering onto a circuit board.

Minimum DC Current Gain (hFE): 15

Ensures stable and consistent amplification of the input signal.

Maximum Collector-Emitter Voltage: 100 V

Allows for handling of high voltage applications with a safety margin.

Transistor Element Material: SILICON

Provides reliable performance and stability over a wide range of operating conditions.

Maximum Collector Current (IC): 8 A

Capable of handling high current loads, suitable for power amplification applications.

Terminal Finish: TIN LEAD

Ensures secure electrical connections and prevents corrosion over time.

Terminal Position: SINGLE

Simplifies circuit connections and layouts.

Case Connection: COLLECTOR

Facilitates efficient heat dissipation, important for high-power applications.

Nominal Transition Frequency (fT): 3 MHz

Indicates the speed at which the transistor can operate, suitable for medium frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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