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BD801AU

Onsemi

BD801AU by Onsemi

The Onsemi BD801AU is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 8A. With a min. DC current gain of 15, it's ideal for amplifier applications operating up to 150 °C. Its through-hole terminal form and flange mount package make it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 494 parts In-Stock

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Vyrian

USA . 55 parts In-Stock

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Problanco Electronics

Mexico . 6,362 parts In-Stock

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SupplyDigital Components

Austria . 5,623 parts In-Stock

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Kulean Microsystems

USA . 3,683 parts In-Stock

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TANS Electronics

Latvia . 2,877 parts In-Stock

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Corphita

USA . 1,236 parts In-Stock

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Native Components

USA . 597 parts In-Stock

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Northwest PG Solutions

USA . 281 parts In-Stock

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Corohmni

South Africa . 191 parts In-Stock

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UHIMA Technologies

Türkiye . 61 parts In-Stock

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Overview

Enhance your electronic projects with the BD801AU by Onsemi, a high-quality Power BJT perfect for amplifier applications. Manufactured by industry leader Onsemi, this NPN transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 100V and a maximum collector current of 8A, this transistor is designed to meet your power needs. Upgrade your designs with the BD801AU and experience the benefits of superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, extending the lifespan of the transistor.

Polarity or Channel Type: NPN

Allows for easy integration into NPN transistor circuits, making it versatile for a variety of applications.

Configuration: SINGLE

Simplified design and easy installation for straightforward circuit integration.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplifying signals.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices or circuits.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto a circuit board, making it suitable for DIY projects or prototyping.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in various environmental conditions.

Maximum Collector-Emitter Voltage: 100 V

Can handle high voltage levels, making it suitable for applications where voltage spikes may occur.

Maximum Collector Current (IC): 8 A

Capable of handling high currents for power applications without overheating or damage.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for high-speed switching, making it ideal for RF and digital applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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