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BD802AJ

Onsemi

BD802AJ by Onsemi

BD802AJ by Onsemi is a PNP BJT transistor with 100V VCE, 8A IC, and 3MHz fT. Ideal for amplifier applications due to its single configuration and hFE of 15. Packaged in plastic/epoxy with flange mount style for through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,922 parts In-Stock

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Vyrian

USA . 1,683 parts In-Stock

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1,683

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Distributors (Availability)

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Native Components

USA . 894 parts In-Stock

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$0.193

100+ parts

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$0.185

894

$0.193

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$0.185

Northwest PG Solutions

USA . 1,847 parts In-Stock

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$0.212

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$0.187

1,847

$0.212

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$0.187

TANS Electronics

Latvia . 6,416 parts In-Stock

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6,416

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Problanco Electronics

Mexico . 6,055 parts In-Stock

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6,055

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SupplyDigital Components

Austria . 4,167 parts In-Stock

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4,167

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Kulean Microsystems

USA . 936 parts In-Stock

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936

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Corphita

USA . 662 parts In-Stock

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Corohmni

South Africa . 105 parts In-Stock

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UHIMA Technologies

Türkiye . 50 parts In-Stock

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Overview

Experience the power of reliability with the BD802AJ by Onsemi. As a leading manufacturer in the industry, Onsemi sets the standard for quality and innovation. The BD802AJ is a Power Bipolar Junction Transistor designed for amplifier applications, offering a maximum collector current of 8A and a minimum DC current gain of 15. With its PNP configuration and flange mount package style, this transistor provides superior performance and efficiency. Trust Onsemi to deliver products that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications in different environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Simplified design with a single configuration makes it easy to use and integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance for amplification purposes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering, making installation and maintenance convenient.

No. of Terminals: 3

Simple 3-terminal configuration for easy connectivity and circuit integration.

Package Style (Meter): FLANGE MOUNT

Flange mount package style enables secure mounting and heat dissipation for reliable operation.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures consistent and stable performance in amplification tasks.

Maximum Collector-Emitter Voltage: 100 V

Supports higher voltage applications, providing versatility for different circuit requirements.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring long-term functionality of the transistor.

Maximum Collector Current (IC): 8 A

High maximum collector current rating allows for handling higher current loads, ideal for power applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and conductivity, facilitating reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and circuit layout, reducing complexity in design.

Case Connection: COLLECTOR

Collector case connection for efficient heat dissipation and reliable performance in power applications.

Nominal Transition Frequency (fT): 3 MHz

Nominal transition frequency of 3 MHz indicates the speed at which the transistor can switch between on and off states, important for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD802AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD802AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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