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BD801BG

Onsemi

BD801BG by Onsemi

The Onsemi BD801BG is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 8A. With a min. DC current gain of 15, it's ideal for amplifier applications operating up to 150 °C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,993 parts In-Stock

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Digiode

USA . 119 parts In-Stock

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Native Components

USA . 451 parts In-Stock

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$5.710

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SupplyDigital Components

Austria . 7,799 parts In-Stock

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Kulean Microsystems

USA . 4,968 parts In-Stock

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Problanco Electronics

Mexico . 4,587 parts In-Stock

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Northwest PG Solutions

USA . 2,373 parts In-Stock

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Corphita

USA . 1,510 parts In-Stock

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TANS Electronics

Latvia . 1,037 parts In-Stock

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UHIMA Technologies

Türkiye . 663 parts In-Stock

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Corohmni

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Overview

Unleash the power of innovation with the Onsemi BD801BG Power Bipolar Junction Transistor. Crafted with precision by Onsemi, this NPN transistor is designed for high-performance amplification applications. Its superior quality and reliability make it a top choice for engineers and hobbyists alike. Experience seamless integration and enhanced functionality with the BD801BG's flange mount package style and maximum collector-emitter voltage of 100V. Elevate your projects to new heights with the Onsemi BD801BG - where quality meets performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and lightweight housing for the transistor, ensuring reliable performance and easy handling.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications and provide efficient signal processing.

Configuration: SINGLE

Simplified design with a single transistor configuration for easy installation and troubleshooting.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring high-quality signal amplification.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement in various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connection points for easy soldering or PCB mounting.

No. of Terminals: 3

Simple 3-terminal design for easy integration into circuit boards or other electronic applications.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for secure mounting and heat dissipation in electronic devices.

Minimum DC Current Gain (hFE): 15

Higher minimum DC current gain ensures consistent and reliable amplification of signals.

Maximum Operating Temperature: 150 °C

Withstands high temperatures up to 150 °C, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 100 V

Can handle high collector-emitter voltages up to 100V, making it suitable for a variety of applications.

Transistor Element Material: SILICON

Silicon material provides excellent performance and reliability in electronic circuits.

Maximum Collector Current (IC): 8 A

Capable of handling high collector currents up to 8A, making it suitable for power applications.

Terminal Position: SINGLE

Single terminal position simplifies installation and reduces the chances of wiring errors.

Case Connection: COLLECTOR

Collector case connection provides easy access for connecting external components in electronic circuits.

Nominal Transition Frequency (fT): 3 MHz

Higher nominal transition frequency ensures faster response time and better signal processing capabilities.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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