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BD802AF

Onsemi

BD802AF by Onsemi

The Onsemi BD802AF is a PNP BJT transistor with 100V VCE, 8A IC, and 15 min hFE. Ideal for amplifier applications, it has a silicon element, through-hole terminals, and flange mount style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,333 parts In-Stock

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1,333

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Vyrian

USA . 1,152 parts In-Stock

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1,152

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 959 parts In-Stock

1+ parts

$0.209

100+ parts

-

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$0.201

959

$0.209

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$0.201

Northwest PG Solutions

USA . 553 parts In-Stock

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$0.230

100+ parts

-

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$0.203

553

$0.230

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$0.203

SupplyDigital Components

Austria . 7,584 parts In-Stock

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7,584

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TANS Electronics

Latvia . 6,478 parts In-Stock

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6,478

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Problanco Electronics

Mexico . 1,310 parts In-Stock

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1,310

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UHIMA Technologies

Türkiye . 840 parts In-Stock

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840

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Corphita

USA . 571 parts In-Stock

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Kulean Microsystems

USA . 332 parts In-Stock

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Corohmni

South Africa . 75 parts In-Stock

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Overview

Unleash the power of the BD802AF by Onsemi, a top-quality Power Bipolar Junction Transistor designed for amplification applications. With the trusted reputation of Onsemi behind it, this PNP transistor offers unparalleled reliability and performance. Ideal for a wide range of electronic projects, the BD802AF provides customers with exceptional value and benefits. Experience the advantages of this product today and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and heat resistance, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP transistor circuits.

Configuration: SINGLE

Simplified setup and operation in single transistor circuits.

Transistor Application: AMPLIFIER

Ideal for amplifier circuits, providing signal amplification capabilities.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections on a PCB.

No. of Terminals: 3

Simplifies circuit connections with fewer terminals to work with.

Package Style (Meter): FLANGE MOUNT

Allows for easy and secure mounting in a flange mount setup.

Minimum DC Current Gain (hFE): 15

Ensures stable and consistent transistor amplification performance.

Maximum Collector-Emitter Voltage: 100 V

Capable of handling high voltages in various applications.

Transistor Element Material: SILICON

Provides efficiency and reliability in transistor operation.

Maximum Collector Current (IC): 8 A

Suitable for applications requiring high current handling capabilities.

Terminal Finish: TIN LEAD

Ensures good solder ability and conductivity for terminal connections.

Terminal Position: SINGLE

Simplifies circuit design with a single terminal position.

Case Connection: COLLECTOR

Directs the current flow to the collector terminal for proper transistor operation.

Nominal Transition Frequency (fT): 3 MHz

Indicates the frequency response capabilities of the transistor for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD802AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD802AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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