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BD801

Onsemi

BD801 by Onsemi

The Onsemi BD801 is a NPN BJT transistor with 100V VCE, 8A IC, and 3MHz fT. Ideal for amplifier applications, it has a min hFE of 15 and operates b/w -55 °C to 150°C. The through-hole package style with flange mount makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

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Digiode

USA . 2,377 parts In-Stock

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Vyrian

USA . 2,265 parts In-Stock

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Anansix

USA . 916 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 248 parts In-Stock

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Pegasus Components GmbH

Germany . 56 parts In-Stock

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LittleDiode

UK . 28 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 15 parts In-Stock

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Native Components

USA . 119 parts In-Stock

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Kulean Microsystems

USA . 8,183 parts In-Stock

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Problanco Electronics

Mexico . 5,009 parts In-Stock

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Corphita

USA . 2,635 parts In-Stock

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Northwest PG Solutions

USA . 2,327 parts In-Stock

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TANS Electronics

Latvia . 2,135 parts In-Stock

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Supply Digital

USA . 2,055 parts In-Stock

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SupplyDigital Components

Austria . 405 parts In-Stock

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Corohmni

South Africa . 327 parts In-Stock

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UHIMA Technologies

Türkiye . 276 parts In-Stock

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Assy Fe

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Overview

Unlock the power of innovation with the BD801 by Onsemi. This high-quality Power Bipolar Junction Transistor (BJT) offers unparalleled performance and reliability for amplifier applications. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor boasts a maximum collector-emitter voltage of 100V and a collector current of 8A, making it ideal for a variety of electronic projects. With a minimum DC current gain of 15 and a nominal transition frequency of 3 MHz, the BD801 delivers exceptional value and performance to customers looking to take their designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers protection and durability, making the transistor suitable for various environmental conditions.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification applications, which makes this transistor suitable for amplifier circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in amplifier applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, making it easier to solder and integrate into circuits.

Maximum Collector-Emitter Voltage: 100 V

With a high maximum voltage rating, this transistor can handle higher voltages, making it suitable for amplifier circuits.

Maximum Collector Current (IC): 8 A

High collector current rating allows the transistor to handle large currents, making it suitable for power amplifier applications.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds, making this transistor suitable for high-frequency amplifier applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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