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BD801BD

Onsemi

BD801BD by Onsemi

The Onsemi BD801BD is a NPN BJT transistor with 100V VCE, 8A IC, and 15 min hFE. Ideal for amplifier applications, it operates up to 150 °C with a fT of 3MHz. The through-hole package has a flange mount style and tin-lead finish for single terminal connection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,935 parts In-Stock

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Digiode

USA . 951 parts In-Stock

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951

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Native Components

USA . 316 parts In-Stock

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$5.710

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316

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TANS Electronics

Latvia . 7,047 parts In-Stock

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Kulean Microsystems

USA . 3,578 parts In-Stock

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Problanco Electronics

Mexico . 2,763 parts In-Stock

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SupplyDigital Components

Austria . 1,513 parts In-Stock

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Northwest PG Solutions

USA . 1,259 parts In-Stock

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$5.596

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Corphita

USA . 970 parts In-Stock

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UHIMA Technologies

Türkiye . 556 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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Overview

Elevate your amplifier projects with the high-quality BD801BD power bipolar junction transistor from Onsemi. Manufactured with precision and expertise, this NPN transistor offers exceptional performance and reliability. Perfect for a wide range of applications, this transistor provides superior amplification capabilities while maintaining efficiency. Experience the value and benefits of using the BD801BD, whether you're a hobbyist or a professional looking to elevate your electronic designs. Trust in Onsemi for quality you can depend on.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and provide good performance characteristics.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 100 V

Can handle high voltage levels, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 8 A

Capable of handling high currents, suitable for applications requiring high power output.

Nominal Transition Frequency (fT): 3 MHz

High transition frequency allows for fast switching speeds, ideal for applications requiring rapid signal processing.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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