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BD801BS

Onsemi

BD801BS by Onsemi

The Onsemi BD801BS is a NPN BJT transistor with max. collector-emitter voltage of 100V, ideal for amplifier applications. Featuring a min. DC current gain of 15 and max. collector current of 8A, it operates up to 150 °C. Its package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,840 parts In-Stock

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Vyrian

USA . 1,112 parts In-Stock

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Native Components

USA . 546 parts In-Stock

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$5.710

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SupplyDigital Components

Austria . 5,055 parts In-Stock

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TANS Electronics

Latvia . 4,218 parts In-Stock

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Northwest PG Solutions

USA . 1,793 parts In-Stock

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Corphita

USA . 742 parts In-Stock

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Problanco Electronics

Mexico . 718 parts In-Stock

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Kulean Microsystems

USA . 144 parts In-Stock

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Corohmni

South Africa . 129 parts In-Stock

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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Overview

Looking for a reliable and high-quality power bipolar junction transistor for your amplifier applications? Look no further than the BD801BS by Onsemi. Known for their superior manufacturing standards, Onsemi ensures that each BD801BS transistor delivers top-notch performance and reliability. With a maximum collector-emitter voltage of 100V and a maximum collector current of 8A, this NPN transistor offers exceptional value and benefits to customers. Upgrade your amplifier with the BD801BS and experience enhanced audio quality and performance like never before!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are well-suited for general purpose applications.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplification tasks, ensuring reliable performance in audio or signal processing applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ideal for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications that require a higher voltage handling capacity.

Maximum Collector Current (IC): 8 A

Able to handle high current loads, making it suitable for power amplification tasks.

Nominal Transition Frequency (fT): 3 MHz

Offers high frequency response, ideal for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801BS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801BS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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