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BD801AJ

Onsemi

BD801AJ by Onsemi

The Onsemi BD801AJ is a NPN BJT transistor with 100V VCE, 8A IC, and 15 min hFE. Ideal for amplifier applications, it has a SILICON element in a PLASTIC/EPOXY package with FLANGE MOUNT style. The transistor operates at 3MHz fT frequency and features THROUGH-HOLE terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,009 parts In-Stock

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1,009

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Digiode

USA . 589 parts In-Stock

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589

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 285 parts In-Stock

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$7.940

100+ parts

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285

$7.940

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Northwest PG Solutions

USA . 522 parts In-Stock

1+ parts

$8.734

100+ parts

$7.861

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522

$8.734

$7.861

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SupplyDigital Components

Austria . 6,808 parts In-Stock

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6,808

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TANS Electronics

Latvia . 2,662 parts In-Stock

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2,662

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Corphita

USA . 2,150 parts In-Stock

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2,150

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Kulean Microsystems

USA . 1,924 parts In-Stock

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1,924

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UHIMA Technologies

Türkiye . 423 parts In-Stock

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423

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Problanco Electronics

Mexico . 394 parts In-Stock

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394

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Corohmni

South Africa . 132 parts In-Stock

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Overview

Unleash the power of innovation with the Onsemi BD801AJ Power Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers unmatched quality and reliability. Ideal for amplifier applications, this transistor provides a seamless performance that exceeds expectations. Experience the value of superior design and engineering with the BD801AJ, delivering maximum collector-emitter voltage of 100V and a collector current of 8A. Elevate your projects to new heights with the Onsemi BD801AJ.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration into electronic systems.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance for audio or signal amplification.

Package Shape: RECTANGULAR

Facilitates easy mounting and placement within electronic devices or circuit boards.

Terminal Form: THROUGH-HOLE

Enables secure and reliable connections during soldering or assembly processes.

No. of Terminals: 3

Offers necessary connections for power, signal, and ground, ensuring proper functionality within a circuit.

Package Style (Meter): FLANGE MOUNT

Allows for convenient installation and mounting in various equipment or systems.

Minimum DC Current Gain (hFE): 15

Ensures stable and consistent amplification of signals within the circuit.

Maximum Collector-Emitter Voltage: 100 V

Supports high voltage applications, making it suitable for a wide range of electronic projects.

Transistor Element Material: SILICON

Provides reliable performance and efficiency, offering consistent results in different operating conditions.

Maximum Collector Current (IC): 8 A

Handles high current loads with ease, making it ideal for power circuit applications.

Terminal Finish: TIN LEAD

Ensures good solderability and conductivity, facilitating easy assembly and connection within a circuit.

Terminal Position: SINGLE

Simplifies wiring and connection processes, reducing the chances of errors or malfunctions.

Case Connection: COLLECTOR

Facilitates efficient heat dissipation and helps maintain the transistor's operating temperature within safe limits.

Nominal Transition Frequency (fT): 3 MHz

Indicates the speed and response time of the transistor, making it suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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