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BD801BV

Onsemi

BD801BV by Onsemi

The Onsemi BD801BV is a NPN BJT transistor with 100V VCE, 8A IC, and 3MHz fT. Ideal for amplifier applications, it has a min hFE of 15 and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 979 parts In-Stock

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979

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Vyrian

USA . 110 parts In-Stock

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110

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 969 parts In-Stock

1+ parts

$0.353

100+ parts

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$0.339

969

$0.353

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$0.339

Northwest PG Solutions

USA . 1,249 parts In-Stock

1+ parts

$0.389

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$0.343

1,249

$0.389

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$0.343

TANS Electronics

Latvia . 5,780 parts In-Stock

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5,780

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Problanco Electronics

Mexico . 5,622 parts In-Stock

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5,622

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Kulean Microsystems

USA . 2,437 parts In-Stock

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2,437

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Corphita

USA . 2,203 parts In-Stock

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2,203

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SupplyDigital Components

Austria . 1,875 parts In-Stock

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1,875

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UHIMA Technologies

Türkiye . 620 parts In-Stock

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620

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Corohmni

South Africa . 441 parts In-Stock

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441

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Overview

Elevate your amplifier applications with the high-quality BD801BV Power BJT by Onsemi. Known for their exceptional manufacturing standards, Onsemi delivers reliable and durable products that exceed industry standards. The BD801BV offers customers value and benefits through its superior performance and efficiency. Experience improved amplification and power management with this NPN transistor that boasts a maximum collector-emitter voltage of 100V and a maximum collector current of 8A. Trust in Onsemi to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the transistor, ensuring durability and preventing damage.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile for various electronic circuits.

Configuration: SINGLE

Simplified design and easy to use in circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Package Shape: RECTANGULAR

Allows for easy mounting and placement within circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals are reliable and sturdy for connecting to circuit boards.

No. of Terminals: 3

Simplified connection setup with necessary terminals for operation.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting on a flange for stability.

Minimum DC Current Gain (hFE): 15

Ensures consistent and reliable amplification of current in the transistor.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for various environments.

Maximum Collector-Emitter Voltage: 100 V

Supports high voltage operation, suitable for different applications.

Transistor Element Material: SILICON

Silicon transistors offer good performance and reliability in electronic circuits.

Maximum Collector Current (IC): 8 A

Can handle high collector currents, suitable for power applications.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for terminal connections.

Terminal Position: SINGLE

Simplified connection setup with a single position for connections.

Case Connection: COLLECTOR

Clear indication of the connection point for the collector.

Nominal Transition Frequency (fT): 3 MHz

Supports high-frequency operations, suitable for fast switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BD801BV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BD801BV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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