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CQF25C/D44

NXP Semiconductors

CQF25C/D44 by NXP Semiconductors

CQF25C/D44 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 3,204 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 1,335 parts In-Stock

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UNI Independent Distributors

Spain . 4,812 parts In-Stock

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Corphita

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Northwest PG Solutions

USA . 1,557 parts In-Stock

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Native Components

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Overview

Unlock the power of precision with the CQF25C/D44 laser diode from NXP Semiconductors, a leader in innovative electronic solutions. Designed for demanding applications, this high-quality diode offers exceptional performance in various environments, ensuring reliability and accuracy. With its optimized wavelength and rapid response time, enhance your projects in fields like industrial automation and medical imaging while benefiting from NXP's commitment to excellence and durability.

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

The relatively low maximum forward current ensures the diode operates efficiently, making it ideal for battery-powered applications where power conservation is crucial.

Peak Wavelength: 875 nm

The peak wavelength of 875 nm falls within the infrared spectrum, making this laser diode suitable for a range of applications including optical communication and sensing.

Optoelectronic Type: LASER DIODE

As a laser diode, this product provides a coherent light source, which is essential for high-precision applications such as data transmission and medical devices.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode can function reliably in warm environments, enhancing its versatility in industrial applications.

Minimum Operating Temperature: -10 °C

The ability to operate at temperatures as low as -10 °C allows this diode to be used in various outdoor and cold environment applications without performance degradation.

Maximum Response Time: 0.0000000005 s

This incredibly fast response time increases the diode's capability for high-speed data transmission, making it suitable for advanced communication systems.

Semiconductor Material: AlGaAs

AlGaAs provides a high-efficiency and reliable performance in laser diodes, ensuring robust operation and longevity in demanding applications.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm enables the laser diode to work effectively in various applications like spectroscopy and provides flexibility in wavelength tuning.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures sturdy connections, making it easier to integrate into various devices and systems.

Maximum Forward Voltage: 2.5 V

The low maximum forward voltage of 2.5 V ensures compatibility with standard electronic components, making it easier to design and implement in different circuit configurations.

Technical Specifications

Laser Diodes CQF25C/D44 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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