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CQF25C/D41

NXP Semiconductors

CQF25C/D41 by NXP Semiconductors

CQF25C/D41 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 875 nm and a max forward current of 0.15 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,419 parts In-Stock

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Anansix

USA . 2,511 parts In-Stock

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2,511

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Vyrian

USA . 2,202 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 751 parts In-Stock

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$4.100

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$4.100

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Native Components

USA . 516 parts In-Stock

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$38.687

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$37.139

516

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$37.139

Northwest PG Solutions

USA . 1,094 parts In-Stock

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$42.555

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$42.555

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Corphita

USA . 3,592 parts In-Stock

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UNI Independent Distributors

Spain . 795 parts In-Stock

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795

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Overview

Elevate your applications with the CQF25C/D41 laser diode from NXP Semiconductors, a leader in innovation and quality. Designed for precision, this reliable component offers unparalleled performance across a range of industries, from medical devices to telecommunications. With exceptional temperature resilience and rapid response times, you’ll experience enhanced efficiency and longevity. Trust in NXP’s expertise to power your projects with cutting-edge technology and superior value!

Feature Benefit Bullets

Maximum Forward Current: 0.15 A

This low maximum forward current allows for energy-efficient operation, making the product suitable for applications that require minimal power consumption.

Peak Wavelength: 875 nm

The peak wavelength of 875 nm is ideal for applications such as optical communication and sensor systems, ensuring effective light transmission and detection.

Optoelectronic Type: LASER DIODE

As a laser diode, this product provides coherent light output, which is essential for high-precision tasks requiring focused and stable light sources.

Maximum Operating Temperature: 60 °C

With a maximum operating temperature of 60 °C, this laser diode is reliable for various challenging environments, enhancing its versatility and application range.

Minimum Operating Temperature: -10 °C

The capability to operate at temperatures as low as -10 °C allows this laser diode to perform in cold conditions, making it ideal for outdoor and industrial uses.

Maximum Response Time: 0.5 ns

A fast response time of 0.5 nanoseconds enables high-speed applications, ensuring effective performance in time-sensitive systems like high-speed data transmission.

Semiconductor Material: AlGaAs

Utilizing AlGaAs material, this laser diode benefits from excellent efficiency and performance, which leads to enhanced output power and reduced heat generation.

Spectral Bandwidth: 4.5 nm

A spectral bandwidth of 4.5 nm offers flexibility in applications that require a range of wavelengths for various optical systems, without compromising performance.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mount feature ensures easy and secure installation on PCBs, making the integration process hassle-free for developers and engineers.

Maximum Forward Voltage: 2.5 V

With a low maximum forward voltage of 2.5 V, this product is optimized for low-voltage applications, which supports energy-saving designs in electronic circuitry.

Technical Specifications

Laser Diodes CQF25C/D41 attributes and parameters. Explore more Laser Diodes devices from NXP Semiconductors

Specs

Maximum Forward Current:

.15 A

Maximum Forward Voltage:

2.5 V

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-10 Cel

Optoelectronic Type:

Peak Wavelength (nm):

875

Maximum Response Time:

.0000000005 s

Semiconductor Material:

AlGaAs

Spectral Bandwidth:

4.5 m

Sub-Category:

Laser Diodes

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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