Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BC857CWH6327XTSA1
Infineon Technologies
BC857CWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package suitable for surface mount technology.
LOW NOISE
.1 A
45 V
SINGLE
420
R-PDSO-G3
1
3
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
PNP
AEC-Q101
YES
GULL WING
DUAL
AMPLIFIER
SILICON
250 MHz
BC858BWH6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;
30 V
220
e3
TIN
BC860CWH6327XTSA1
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: LOW NOISE;
SMBT3904PNH6327XTSA1
SMBT3904PNH6327XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max collector-emitter voltage of 40V, hFE of 30, and fT of 250MHz. With a package style of small outline and Gull Wing terminals, it's suitable for surface mount designs in various electronic circuits.
.2 A
40 V
SEPARATE, 2 ELEMENTS
30
R-PDSO-G6
2
6
NPN AND PNP
SWITCHING
300 ns
70 ns
SMBT3906UE6327HTSA1
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
2N3903/D26Z
National Semiconductor
2N3903/D26Z by National Semiconductor is a NPN BJT transistor with VCEsat of 0.2V, hFE of 50, and IC of 0.2A. Ideal for switching applications due to its fast ton of 70ns and toff of 225ns. With a max VCE of 40V and fT of 250MHz, it offers reliable performance in various electronic circuits.
HIGH SPEED SATURATED SWITCHING
50
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NPN
Not Qualified
NO
THROUGH-HOLE
BOTTOM
225 ns
.2 V
IMD3AT108
ROHM
ROHM's IMD3AT108 is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor for switching applications. With max VCEsat of 0.3V, it operates up to 150°C, has fT of 250MHz, and can handle IC of 0.05A in a small outline package suitable for surface mount technology.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
.05 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
e1
150 Cel
260
.3 W
BIP General Purpose Small Signal
TIN SILVER COPPER
10
.3 V
UMH6NTR
ROHM UMH6NTR is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.3V, hFE of 68, and max IC of 0.03A. With a package style of small outline and peak reflow temp at 260°C, it's ideal for compact electronic devices.
BUILT IN BIAS RESISTANCE RATIO IS 1.2
.03 A
68
e2
.15 W
BIP General Purpose Small Signals
TIN COPPER
2SC1741ASTPQ
ROHM 2SC1741ASTPQ is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 120, and fT of 250MHz. Ideal for switching applications due to its max. collector-emitter voltage of 50V and max. collector current of 0.5A in a through-hole package style.
.5 A
120
R-PSIP-T3
IN-LINE
Other Transistors
IMZ4T108
ROHM's IMZ4T108 is a Small Signal BJT with NPN and PNP types, 2 separate elements, and Gull Wing terminals. It has a max power dissipation of 0.3W, hFE of 120, and can handle up to 32V collector-emitter voltage. Ideal for applications requiring high transition frequency (fT) of 250MHz in small outline packages.
32 V
DTA114YCAT116
ROHM DTA114YCAT116 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.07A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at max temp of 150°C with peak reflow temp of 260°C, making it suitable for high-frequency operations up to 250MHz.
DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7
.07 A
SINGLE WITH BUILT-IN RESISTOR
.2 W
DTA123ECAT116
ROHM DTA123ECAT116 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 20, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operating at up to 150°C, it offers a transition frequency of 250MHz for efficient performance.
20
DTA144EUAT106
ROHM DTA144EUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.
BUILT IN BIAS RESISTOR RATIO IS 1
DTC114TUAT106
ROHM DTC114TUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
BUILT-IN BIAS RESISTOR
100
DTC124XUAT106
ROHM DTC124XUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
DTC143EUA-T106
ROHM DTC143EUA-T106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it has a built-in resistor in a small outline package suitable for surface mount technology. Operating up to 150°C, it offers high performance in compact designs.
BUILT-IN BIAS RESISTOR RATIO IS 1
DTC114ESATP
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
NOT SPECIFIED
DTC143TSATP
ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.
BC858BWT106
ROHM BC858BWT106 is a PNP BJT with 30V VCEO, 0.1A IC, and 210 hFE. Ideal for small signal applications in electronics due to its 250MHz fT, Gull Wing terminals, and compact Small Outline package. With a max operating temp of 150°C, it's suitable for various surface mount designs.
210
.35 W
DTA113ZETL
ROHM DTA113ZETL is a PNP BJT transistor with VCEsat of 0.3V, hFE of 33, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and transition frequency of 250MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 10
33
DTA114EUA-T106
ROHM's DTA114EUA-T106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
COLLECTOR
DTA123JUA-T106
ROHM's DTA123JUA-T106 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers efficient performance in compact designs.
BUILT-IN BIAS RESISTOR RATIO IS 21
80
DTC114GUAT106
ROHM DTC114GUAT106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
2SD2226KT146W
ROHM 2SD2226KT146W is a NPN BJT transistor with max. collector-emitter voltage of 50V and max. collector current of 0.15A. It has a min. DC current gain of 1200, suitable for small signal applications in electronics due to its high transition frequency of 250MHz. The Gull Wing terminal form and small outline package make it ideal for surface mount designs requiring compact components.
.15 A
1200
UMC4NTR
ROHM UMC4NTR is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. Features include VCEsat of 0.3V, hFE of 68, and fT of 250MHz. With a max operating temperature of 150°C, it has a collector-emitter voltage of 50V and collector current of 0.03A.
BUILT IN BIAS RESISTOR RATIO 1
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
EMD9FHAT2R
ROHM EMD9FHAT2R is a Small Signal BJT with NPN and PNP types. It has 2 elements with built-in resistor for switching applications. Features include hFE of 68, VCE of 50V, IC of 0.1A, fT of 250MHz. Suitable for surface mount in automotive electronics due to AEC-Q101 compliance.
BUILT IN BIAS RESISTANCE RATIO IS 4.7
R-PDSO-F6
FLAT
UMD22NFHATR
ROHM UMD22NFHATR is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It's ideal for switching applications, featuring 80 min hFE, 50V VCEO, and 250MHz fT. Package: SOT-363, surface mount Gull Wing terminals.
BUILT IN BIAS RESISTANCE RATIO IS 10
DTA114TMT2L
ROHM's DTA114TMT2L is a PNP BJT with built-in resistor for switching applications. Features include 100 min hFE, 50V VCEO, and 250MHz fT. Its small outline package and surface mount capability make it ideal for compact electronic designs.
R-PDSO-F3
DTC123EMT2L
ROHM's DTC123EMT2L is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and nominal transition frequency of 250MHz. Ideal for surface mount designs in small outline packages.
DCX4710H-7
Diodes Incorporated
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR
35
MATTE TIN
DDC144NS-7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
DDTC113TLP-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BUILT-IN BIAS RESISTOR, HIGH RELIABILITY
R-PDSO-N3
e4
.25 W
NICKEL PALLADIUM GOLD
NO LEAD
DTC124EEBTL
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTANCE RATIO IS 1
56
DCP69A-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;
1 A
20 V
40
R-PDSO-G4
4
DCP69A-16-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): 1 A; No. of Elements: 1;
EMF21-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
UMG4N-7
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
DCX115EK-7-F
DCX115EK-7-F by Diodes Inc. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and built-in resistor. It has 6 terminals, max power dissipation of 0.3W, and operates up to 150°C. Ideal for applications requiring high transition frequency at 250MHz in a compact small outline package.
82
2N3906,116
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
4.5 pF
-65 Cel
.5 W
65 ns
.4 V
2N4401,116
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
.6 A
6.5 pF
250 ns
35 ns
.75 V
PZT3906,115
PZT3906,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 30, and IC of 0.1A. With a max operating temperature of 150°C, it has a fT of 250MHz making it suitable for high-frequency switching circuits.
1.5 W
2N4401-AP
Micro Commercial Components
2N4401-AP by Micro Commercial Components is a NPN BJT transistor with max. collector-emitter voltage of 40V, min. DC current gain of 40, and transition frequency of 250MHz. Ideal for amplifier applications due to its single configuration and cylindrical package style with through-hole terminals.
.6 W
Matte Tin (Sn)
255 ns
DTC114EE-TP
DTC114EE-TP by Micro Commercial Components is a NPN BJT with built-in resistor for switching applications. It has a max power dissipation of 0.15W, hFE of 30, and fT of 250MHz. This surface mount transistor comes in a small outline package with matte tin finish and dual terminals.
MMBT4126LT1
Onsemi
MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.
25 V
60
TO-236AB
e0
235
.225 W
Tin/Lead (Sn/Pb)
MMBT4401T-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;
-55 Cel
TIN LEAD
MMBT4401WT1
MMBT4401WT1 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.75V, hFE of 40, and can handle a max IC of 0.6A. With a small outline package style, it operates b/w -55 to 150 °C and has a transition frequency of 250 MHz suitable for various electronic circuits.
MMDT3906-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
DDTC114WUA-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT-IN BIAS RESISTANCE RATIO IS 0.47
24
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