Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DDTC124XE-7-F
Diodes Incorporated
DDTC124XE-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. It features a max collector-emitter voltage of 50V, max collector current of 0.05A, and transition frequency of 250MHz. This surface mount transistor in plastic/epoxy package is suitable for low-power electronic circuits.
BUILT-IN BIAS RESISTOR RATIO IS 2.14
.05 A
50 V
SINGLE WITH BUILT-IN RESISTOR
68
R-PDSO-G3
e3
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.15 W
Not Qualified
BIP General Purpose Small Signal
YES
MATTE TIN
GULL WING
DUAL
30
SILICON
250 MHz
DDTC124XKA-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
.2 W
DDTC143EKA-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
20
DDTC143FKA-7-F
BUILT-IN BIAS RESISTOR RATIO IS 4.68
DDTC143XKA-7-F
BUILT-IN BIAS RESISTOR RATIO IS 2.13
DDTC143ZKA-7-F
BUILT-IN BIAS RESISTOR RATIO IS 10
80
DDTC144EKA-7-F
DDTC144VKA-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;
BUILT-IN BIAS RESISTOR RATIO IS 0.21
.03 A
33
DDTC144WE-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
BUILT-IN BIAS RESISTOR RATIO IS 0.47
56
DDTC144WKA-7-F
DDTA115EE-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;
BUILT-IN BIAS RESISTOR RATIO IS 1
.02 A
82
PNP
BIP General Purpose Small Signals
DDTA123EE-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
DDTA124EE-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
PZT3906T1
Onsemi
PZT3906T1 by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits due to its high transition frequency of 250MHz and low turn-on time of 70ns.
COLLECTOR
.2 A
40 V
SINGLE
TO-261AA
R-PDSO-G4
e0
4
235
.3 W
Other Transistors
Tin/Lead (Sn/Pb)
300 ns
70 ns
MMBT3906-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
-55 Cel
TIN LEAD
SWITCHING
MMBT3906T-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
4.5 pF
AEC-Q101
.4 V
MMDT3906V-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
HIGH RELIABILITY
SEPARATE, 2 ELEMENTS
R-PDSO-F6
2
6
FLAT
NSTB1002DXV5T1
NSTB1002DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration with 2 elements, built-in resistor, and a max collector-emitter voltage of 50V. Ideal for switching applications, this transistor has a min hFE of 30 and peak reflow temperature of 260 °C.
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F5
5
NPN AND PNP
.5 W
TIN
2N3906RLRMG
2N3906RLRMG by Onsemi is a PNP BJT with max. power dissipation of 1.5W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for applications requiring low current amplification in through-hole configurations at up to 150°C operating temperature.
TO-92
O-PBCY-T3
e1
ROUND
CYLINDRICAL
1.5 W
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
2N4401RLRPG
2N4401RLRPG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/255ns) and high transition frequency (250MHz).
.6 A
40
255 ns
35 ns
2N3906RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
.35 W
AMPLIFIER
BCX70J-TP
Micro Commercial Components
BCX70J-TP by Micro Commercial Components is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 45V, hFE of 250, and fT of 250MHz. With surface mount capability and GULL WING terminals, it's ideal for compact electronic designs requiring fast switching speeds.
LOW NOISE
45 V
250
.25 W
10
800 ns
150 ns
MMBT3906_NL
Fairchild Semiconductor
MMBT3906_NL by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 40V and max collector current of 0.2A. With a transition frequency of 250MHz, it operates b/w -55 to 150°C, making it ideal for small outline packages in electronic devices.
2N4401G
2N4401G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
2N3906RL1G
2N3906RL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its single configuration and cylindrical package style. Operating temp ranges from -55 °C to 150°C, making it versatile in various environments.
EUROPEAN PART NUMBER
2N3906ZL1G
2N3906ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (70ns/300ns) and high transition frequency (250MHz).
2N4401RLRMG
2N4401RLRMG by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (ton: 35ns, toff: 255ns) and high transition frequency (fT: 250MHz).
BC549CG
BC549CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a min hFE of 420 and can handle a max IC of 0.1A. With a max operating temperature of 150°C, it offers a transition frequency of 250MHz in a cylindrical package suitable for through-hole mounting.
420
.625 W
BC550CG
BC550CG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It offers a min hFE of 420 and can handle a max collector current of 0.1A. With a max operating temperature of 150°C and a collector-emitter voltage of 45V, it is suitable for various electronic projects.
BC560CG
BC560CG by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 380, and operates up to 150°C. With a VCE of 45V and IC of 0.1A, it offers high performance in a cylindrical package suitable for through-hole mounting.
380
Tin/Silver/Copper (Sn/Ag/Cu)
BC560CZL1G
BC560CZL1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 380, and max. power dissipation of 0.625W. Ideal for amplifier applications, it has a max. collector-emitter voltage of 45V and operates up to 150°C.
MMBT2222LT3G
MMBT2222LT3G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 30V, max collector current of 0.6A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260 °C, it operates at up to 150°C and has a transition frequency of 250MHz.
30 V
75
TO-236
.225 W
285 ns
MPS2222RLRAG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
MPS2222RLRMG
MPS2222RLRMG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W in a cylindrical package with through-hole terminals.
MPS2222RLRPG
MPS2222RLRPG by Onsemi is a NPN BJT transistor with 30V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it has a max power dissipation of 1.5W and operates up to 150 °C. Its through-hole package makes it suitable for various electronic designs.
PN2222G
PN2222G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 75, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (250MHz). Its through-hole package makes it suitable for various electronic designs.
PZT3906T1G
PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.
DVRN6056-7-F
NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
SINGLE WITH BUILT-IN DIODE
R-PDSO-G6
ADTA114YUAQ-13
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 4.7
.33 W
AEC-Q101; IATF 16949, MIL-STD-202
ADTA124ECAQ-13
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
.31 W
ADTC144ECAQ-13
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISITOR RATIO IS 1
2SC3624-T1B-A
Renesas Electronics
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .15 A; No. of Elements: 1;
.15 A
200
e6
TIN BISMUTH
BC857BL3E6327XTMA1
Infineon Technologies
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e4;
220
R-XBCC-N3
e4
UNSPECIFIED
CHIP CARRIER
GOLD
NO LEAD
DDC144TH-7-F
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BUILT IN BIAS RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
100
BC857BHZGT116
ROHM
ROHM BC857BHZGT116 is a PNP BJT transistor with hFE of 210, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package style and Gull Wing terminals for surface mounting. AEC-Q101 certified, suitable for automotive electronics requiring high reliability.
210
BCX19HZGT116
ROHM BCX19HZGT116 is a NPN BJT transistor with hFE of 40, VCE of 45V, and IC of 0.5A. Ideal for amplifier applications due to its high transition frequency of 250MHz. Features Gull Wing terminals in a small outline package suitable for surface mount assembly.
.5 A
BC860CWH6327
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
NOT SPECIFIED
RN1406S,LF(D
Toshiba
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
BUILT IN BIAS RESISTANCE RATIO IS 10
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