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250 MHz Small Signal Bipolar Junction Transistors (BJT) 402

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMBT4401-AU_R1_000A1 by Panjit International

MMBT4401-AU_R1_000A1

Panjit International

Panjit International's MMBT4401-AU_R1_000A1 is a NPN BJT transistor for switching applications. With VCEsat of 0.75V, hFE of 100, and IC of 0.6A, it operates in temperatures from -55 to 150 °C. This small outline package with Gull Wing terminals suits high-speed switching needs up to 250MHz.

.6 A

6.5 pF

40 V

SINGLE

100

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

.225 W

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

.75 V

DTC144EMFHAT2L by ROHM

DTC144EMFHAT2L

ROHM

ROHM DTC144EMFHAT2L is a NPN BJT with built-in resistor, ideal for switching applications. Features include hFE of 68, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in automotive electronics.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-F3

e2

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

AEC-Q101

BIP General Purpose Small Signal

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

UMH2NFHATN by ROHM

UMH2NFHATN

ROHM

ROHM UMH2NFHATN is a NPN BJT with 2 elements & built-in resistor. It has hFE of 68, VCE of 50V, and fT of 250MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and Gull Wing terminals for surface mounting.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

PZT4401/ZLX by Nexperia

PZT4401/ZLX

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

COLLECTOR

.6 A

40 V

SINGLE

80

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

250 ns

35 ns

ADA114EUQ-13 by Diodes Incorporated

ADA114EUQ-13

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR, HIGH RELIABILITY;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADC124EUQ-13 by Diodes Incorporated

ADC124EUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA144ECAQ-7 by Diodes Incorporated

ADTA144ECAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA144EUAQ-13 by Diodes Incorporated

ADTA144EUAQ-13

Diodes Incorporated

ADTA144EUAQ-13 by Diodes Inc. is a PNP BJT with 50V VCEO, 0.1A IC, and 250MHz fT. It comes in a small outline package and has a built-in resistor for ease of use. Ideal for automotive applications due to AEC-Q101 compliance and high transition frequency.

HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BC847CWH6433XTMA1 by Infineon Technologies

BC847CWH6433XTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847PNE6327BTSA1 by Infineon Technologies

BC847PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

45 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC847PNH6433XTMA1 by Infineon Technologies

BC847PNH6433XTMA1

Infineon Technologies

Infineon Technologies' BC847PNH6433XTMA1 is a small signal BJT transistor with NPN and PNP polarity. It has a max collector-emitter voltage of 45V, making it suitable for amplifier applications. With a min DC current gain of 200 and a nominal transition frequency of 250MHz, it offers high performance in a compact rectangular package.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847SE6327BTSA1 by Infineon Technologies

BC847SE6327BTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

45 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847SH6433XTMA1 by Infineon Technologies

BC847SH6433XTMA1

Infineon Technologies

Infineon BC847SH6433XTMA1 is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for amplifier applications, it has a fT of 250MHz and IC max of 0.1A. This small outline transistor in gull wing package suits surface mount designs per AEC-Q101 standards.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC857SH6433XTMA1 by Infineon Technologies

BC857SH6433XTMA1

Infineon Technologies

BC857SH6433XTMA1 by Infineon: PNP BJT with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package and high transition frequency. Suitable for surface mount designs with dual terminals in a rectangular shape.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCM846SE6327HTSA1 by Infineon Technologies

BCM846SE6327HTSA1

Infineon Technologies

BCM846SE6327HTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It's used as an amplifier in surface mount applications, featuring max VCE of 65V and IC of 0.1A. Ideal for high-frequency operations with fT of 250MHz and can withstand up to 150°C operating temperature.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC856BWH6327 by Infineon Technologies

BC856BWH6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.1 A

65 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BCV62BE6433HTMA1 by Infineon Technologies

BCV62BE6433HTMA1

Infineon Technologies

PNP; Configuration: CURRENT MIRROR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 30 V;

.1 A

30 V

CURRENT MIRROR

220

R-PDSO-G4

2

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SILICON

250 MHz

BC846PNH6727 by Infineon Technologies

BC846PNH6727

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC846SH6727XTSA1 by Infineon Technologies

BC846SH6727XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847CWB6327 by Infineon Technologies

BC847CWB6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847CWH6778XTSA1 by Infineon Technologies

BC847CWH6778XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847PNH6727XTSA1 by Infineon Technologies

BC847PNH6727XTSA1

Infineon Technologies

Infineon's BC847PNH6727XTSA1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 200 min hFE, 45V VCE max, and 250MHz fT. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847SH6727XTSA1 by Infineon Technologies

BC847SH6727XTSA1

Infineon Technologies

BC847SH6727XTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It has a VCE of 45V and IC of 0.1A, suitable for amplifier applications. This transistor is surface mountable, with Gull Wing terminals in a small outline package shape.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC856BWH6433 by Infineon Technologies

BC856BWH6433

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;

LOW NOISE

.1 A

65 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC857BWH6778XTSA1 by Infineon Technologies

BC857BWH6778XTSA1

Infineon Technologies

Infineon's BC857BWH6778XTSA1 is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a small outline package with gull wing terminals for surface mount assembly. AEC-Q101 compliant, this transistor is designed for automotive electronics.

LOW NOISE

.1 A

45 V

SINGLE

220

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCM856SH6778 by Infineon Technologies

BCM856SH6778

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

DTC114YU3T106 by ROHM

DTC114YU3T106

ROHM

ROHM DTC114YU3T106 is a NPN BJT with built-in resistor for switching applications. It has hFE of 68, VCE of 50V, and fT of 250MHz. The transistor comes in a small outline package with Gull Wing terminals made of silicon material.

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

ADTA143XUAQ-13 by Diodes Incorporated

ADTA143XUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA143ZUAQ-13 by Diodes Incorporated

ADTA143ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SILICON

250 MHz

ADTC114YUAQ-13 by Diodes Incorporated

ADTC114YUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143TUAQ-13 by Diodes Incorporated

ADTC143TUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY, BUILT IN BIAS RESISTOR;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143ZUAQ-13 by Diodes Incorporated

ADTC143ZUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

EMH25FHAT2R by ROHM

EMH25FHAT2R

ROHM

ROHM's EMH25FHAT2R is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features include PLASTIC/EPOXY body, surface mount compatibility, and AEC-Q101 standard compliance.

BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

ACX114EUQ-13R by Diodes Incorporated

ACX114EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ACX143ZUQ-13R by Diodes Incorporated

ACX143ZUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143TUQ-13 by Diodes Incorporated

ADC143TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC143ZUQ-13 by Diodes Incorporated

ADC143ZUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

MMDT4401Q-7-F by Diodes Incorporated

MMDT4401Q-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

ADTA114ECAQ-13 by Diodes Incorporated

ADTA114ECAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY;

BUILT IN BIAS RESISTANCE RATIO IS 1; HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTC143TCAQ-7 by Diodes Incorporated

ADTC143TCAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;

HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZCAQ-7 by Diodes Incorporated

ADTA113ZCAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Reference Standard: AEC-Q101;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZUAQ-13 by Diodes Incorporated

ADTA113ZUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ADTA113ZUAQ-7 by Diodes Incorporated

ADTA113ZUAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

ACX115EUQ-13R by Diodes Incorporated

ACX115EUQ-13R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 82;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ACX115EUQ-7R by Diodes Incorporated

ACX115EUQ-7R

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADA123JUQ-13 by Diodes Incorporated

ADA123JUQ-13

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADA123JUQ-7 by Diodes Incorporated

ADA123JUQ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

HIGH RELIABILITY, BUILT IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADC113TUQ-13 by Diodes Incorporated

ADC113TUQ-13

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY, BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz