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250 MHz Small Signal Bipolar Junction Transistors (BJT) 402

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DDTC114EE-7 by Diodes Incorporated

DDTC114EE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC115EE-7 by Diodes Incorporated

DDTC115EE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .02 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.02 A

50 V

SINGLE WITH BUILT-IN RESISTOR

82

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143EE-7 by Diodes Incorporated

DDTC143EE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC144EE-7 by Diodes Incorporated

DDTC144EE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX114EU-7 by Diodes Incorporated

DCX114EU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 30;

BUILT-IN BIAS RESISTOR RATIO IS 1

.05 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX114YU-7 by Diodes Incorporated

DCX114YU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX123JU-7 by Diodes Incorporated

DCX123JU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX124EU-7 by Diodes Incorporated

DCX124EU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX143TU-7 by Diodes Incorporated

DCX143TU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DCX144EU-7 by Diodes Incorporated

DCX144EU-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR RATIO IS 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDA114YU-7 by Diodes Incorporated

DDA114YU-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDA124EU-7 by Diodes Incorporated

DDA124EU-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDC114EU-7 by Diodes Incorporated

DDC114EU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Additional Features: BUILT-IN BIAS RESISTANCE RATIO IS 1;

BUILT-IN BIAS RESISTANCE RATIO IS 1

.05 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDC114YU-7 by Diodes Incorporated

DDC114YU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; No. of Elements: 2;

BUILT-IN BIAS RESISTANCE RATIO IS 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDC123JU-7 by Diodes Incorporated

DDC123JU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTANCE RATIO IS 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDC124EU-7 by Diodes Incorporated

DDC124EU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTANCE RATIO IS 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDC144EU-7 by Diodes Incorporated

DDC144EU-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .03 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTANCE RATIO IS 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114YE-7 by Diodes Incorporated

DDTC114YE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .07 A; No. of Terminals: 3;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.07 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC123JE-7 by Diodes Incorporated

DDTC123JE-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

MMBT3906-7 by Diodes Incorporated

MMBT3906-7

Diodes Incorporated

Diodes Inc. MMBT3906-7 is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for switching applications, it has a min. DC current gain of 30 and operates b/w -55 to 150°C efficiently in a small outline package shape for surface mount assembly.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

MMBT4401-7 by Diodes Incorporated

MMBT4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 40;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

DDTA114ECA-7 by Diodes Incorporated

DDTA114ECA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123ECA-7 by Diodes Incorporated

DDTA123ECA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA143ECA-7 by Diodes Incorporated

DDTA143ECA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

MMDT4401-7 by Diodes Incorporated

MMDT4401-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 40 V;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMST4126-7 by Diodes Incorporated

MMST4126-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

MMST4401-7 by Diodes Incorporated

MMST4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

255 ns

35 ns

MMDT4413-7 by Diodes Incorporated

MMDT4413-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn On Time (ton): 35 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

DIMD10A-7 by Diodes Incorporated

DIMD10A-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO 100

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDA114TH-7 by Diodes Incorporated

DDA114TH-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DDA114YH-7 by Diodes Incorporated

DDA114YH-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .07 A;

BUILT-IN BIAS RESISTOR RATIO 4.7

.07 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DDA143EH-7 by Diodes Incorporated

DDA143EH-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

20

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DDA144EH-7 by Diodes Incorporated

DDA144EH-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

BUILT-IN BIAS RESISTOR RATIO 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DCX114EH-7 by Diodes Incorporated

DCX114EH-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;

BUILT-IN BIAS RESISTOR RATIO 1

.05 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DCX114TH-7 by Diodes Incorporated

DCX114TH-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DCX123JH-7 by Diodes Incorporated

DCX123JH-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO 21.36

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DCX124EH-7 by Diodes Incorporated

DCX124EH-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

BUILT-IN BIAS RESISTOR RATIO 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DCX143EH-7 by Diodes Incorporated

DCX143EH-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

20

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DCX143TH-7 by Diodes Incorporated

DCX143TH-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DDC124EH-7 by Diodes Incorporated

DDC124EH-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

BUILT IN BIAS RESISTOR RATIO 1

.03 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

DDC143TH-7 by Diodes Incorporated

DDC143TH-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

MIMD10A-7-F by Diodes Incorporated

MIMD10A-7-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO 100

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

MMBT4126-7-F by Diodes Incorporated

MMBT4126-7-F

Diodes Incorporated

Diodes Inc. MMBT4126-7-F is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 60, and fT of 250MHz. With max ratings of 25V VCEO and 0.2A IC, it operates b/w -55°C to 150°C in a small outline package suitable for surface mount technology.

.2 A

4.5 pF

25 V

Single

60

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

.4 V

MMDT4126-7-F by Diodes Incorporated

MMDT4126-7-F

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

CTA2N1P-7-F by Diodes Incorporated

CTA2N1P-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN FET; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): .6 A;

.6 A

40 V

SINGLE WITH BUILT-IN FET

40

30 ns

R-PDSO-G6

e3

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

Not Qualified

20 ns

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

255 ns

35 ns

.75 V

DDTA113TE-7-F by Diodes Incorporated

DDTA113TE-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA113TKA-7-F by Diodes Incorporated

DDTA113TKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTA113ZKA-7-F by Diodes Incorporated

DDTA113ZKA-7-F

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz