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MMBT4126-7-F

Diodes Incorporated

MMBT4126-7-F by Diodes Incorporated

Diodes Inc. MMBT4126-7-F is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 60, and fT of 250MHz. With max ratings of 25V VCEO and 0.2A IC, it operates b/w -55°C to 150°C in a small outline package suitable for surface mount technology.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 100 parts In-Stock

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$2.107

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$1.917

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$1.728

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100

$2.107

$1.917

$1.728

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Mouser Electronics

USA . 504 parts In-Stock

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$0.024

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Arrow

USA . 215 parts In-Stock

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$0.012

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215

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$0.012

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Nova Conductors

Japan . 550 parts In-Stock

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$0.031

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Vyrian

USA . 9,356 parts In-Stock

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Semi Source

USA . 2,721 parts In-Stock

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North Shore Components

USA . 2,250 parts In-Stock

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Ampacity Inc.

Singapore . 68 parts In-Stock

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$0.010

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Aranea Global

USA . 1,000 parts In-Stock

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$0.030

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Continental Prestige Electronics

USA . 6,346 parts In-Stock

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Argo Parts USA

USA . 859 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$2.107

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$1.917

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$1.728

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100

$2.107

$1.917

$1.728

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AZTECH Wire

Italy . 654 parts In-Stock

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$16.927

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Perfect Parts

USA . 135,975 parts In-Stock

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,820 parts In-Stock

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Infinite Electronics LLP (Excess)

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Overview

Enhance your electronic projects with the MMBT4126-7-F by Diodes Incorporated. Crafted with precision and quality, this PNP small signal bipolar junction transistor is designed for switching applications and offers a maximum VCEsat of 0.4V, ensuring optimal performance. With a compact design and surface mount capability, this transistor is versatile and practical for a wide range of projects. Trust in the expertise of Diodes Incorporated to deliver reliable and efficient components that will take your creations to the next level. Elevate your projects today with the MMBT4126-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this transistor suitable for such purposes.

Configuration: Single

Single configuration simplifies circuit design and reduces component count, making it easier to integrate into projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly, ideal for space-constrained designs.

Maximum VCEsat: 0.4 V

Low VCEsat minimizes power losses and increases efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient PCB layout and placement, optimizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide secure and reliable connections during soldering, ensuring stable performance.

Nominal Transition Frequency (fT): 250 MHz

High fT value indicates good high-frequency performance, suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT4126-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.4 V

Trade Compliance

MMBT4126-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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