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DDTC124XE-7-F

Diodes Incorporated

DDTC124XE-7-F by Diodes Incorporated

DDTC124XE-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. It features a max collector-emitter voltage of 50V, max collector current of 0.05A, and transition frequency of 250MHz. This surface mount transistor in plastic/epoxy package is suitable for low-power electronic circuits.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.037

3,000

-

-

-

$0.037

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

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-

50

$0.072

-

-

-

Chip Stock

USA . 36,350 parts In-Stock

1+ parts

-

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36,350

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Vyrian

USA . 3,045 parts In-Stock

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3,045

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Distributors (Availability)

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Ampacity Inc.

Singapore . 4,081 parts In-Stock

1+ parts

$0.028

100+ parts

-

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4,081

$0.028

-

-

-

Continental Prestige Electronics

USA . 3,166 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

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10k+ parts

$0.071

3,166

$0.072

-

-

$0.071

Argo Parts USA

USA . 813 parts In-Stock

1+ parts

$0.072

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

813

$0.072

-

-

$0.070

Andel Nordic

Denmark . 4,760 parts In-Stock

1+ parts

$6.987

100+ parts

-

1k+ parts

$6.707

10k+ parts

$6.707

4,760

$6.987

-

$6.707

$6.707

AZTECH Wire

Italy . 702 parts In-Stock

1+ parts

$21.520

100+ parts

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702

$21.520

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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22,000

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Lixinc

USA . 12,966 parts In-Stock

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12,966

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Perfect Parts

USA . 6,003 parts In-Stock

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6,003

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.071

1k+ parts

$0.068

10k+ parts

$0.067

1,000

-

$0.071

$0.068

$0.067

Overview

Discover the exceptional performance and reliability of the DDTC124XE-7-F by Diodes Incorporated, a leading manufacturer known for innovative small signal bipolar junction transistors. Ideal for a wide range of applications, this NPN transistor offers customers unmatched value with its built-in resistor configuration, high DC current gain, and compact package design. Experience seamless integration and enhanced functionality with this high-quality product, perfect for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this BJT lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into various electronic circuits, enhancing compatibility and flexibility.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this BJT a convenient choice for compact applications.

Surface Mount: YES

Surface mount capability enables quick and easy installation, improving production efficiency and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape enhances heat dissipation and facilitates efficient PCB layout, optimizing performance in demanding environments.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and reliable connections, ensuring stable operation under various conditions.

No. of Terminals: 3

The 3 terminals enable straightforward connection and enable precise control, making this BJT suitable for complex electronic systems.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15W, this BJT can handle high power loads without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for denser circuit designs, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 68

A minimum DC current gain of 68 guarantees consistent amplification performance, making this BJT reliable for signal processing applications.

Maximum Operating Temperature: 150 °C

The maximum operating temperature of 150°C ensures stable performance in harsh environments, expanding the range of applications for this BJT.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating of 50V provides robust protection against voltage spikes, enhancing the BJT's durability in demanding conditions.

Transistor Element Material: SILICON

Silicon transistor element material offers high performance and reliability, making this BJT suitable for precision electronic systems.

Maximum Collector Current (IC): 0.05 A

With a maximum collector current of 0.05A, this BJT can handle moderate current loads, making it ideal for low to medium power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish ensures strong solder joints and excellent conductivity, enhancing the BJT's reliability in diverse operating environments.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting options and simplified circuit connections, enhancing the BJT's versatility in different applications.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures reliable soldering and prevents damage during assembly, enhancing the BJT's longevity.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C enables fast and efficient soldering, reducing production time and ensuring high-quality connections.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250MHz, this BJT offers high-speed performance, making it ideal for signal processing and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC124XE-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.14

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC124XE-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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