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DDTC143ZUA-7-F

Diodes Incorporated

DDTC143ZUA-7-F by Diodes Incorporated

DDTC143ZUA-7-F by Diodes Inc. is a NPN BJT with 80 min hFE, 50V VCEO, and 250MHz fT. Ideal for small signal amplification in electronic circuits due to its compact SMALL OUTLINE package and built-in resistor configuration. Suitable for surface mount applications requiring high-speed switching capabilities at temperatures up to 150°C.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,845 parts In-Stock

1+ parts

$0.263

100+ parts

$0.077

1k+ parts

$0.054

10k+ parts

-

1,845

$0.263

$0.077

$0.054

-

Avnet

USA . 1,353,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,353,000

-

-

-

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Arrow

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.031

90,000

-

-

-

$0.031

Verical

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.031

90,000

-

-

-

$0.031

Farnell

UK . 1,845 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.027

10k+ parts

$0.022

1,845

-

$0.054

$0.027

$0.022

Element14

Singapore . 1,845 parts In-Stock

1+ parts

-

100+ parts

$0.095

1k+ parts

$0.052

10k+ parts

$0.044

1,845

-

$0.095

$0.052

$0.044

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 62 parts In-Stock

1+ parts

$0.048

100+ parts

-

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62

$0.048

-

-

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NAC Semi

USA . 1,083,000 parts In-Stock

1+ parts

-

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1,083,000

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Vyrian

USA . 185,517 parts In-Stock

1+ parts

-

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185,517

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-

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IBS Electronics

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.019

12,000

-

-

-

$0.019

Ashlea Components Ltd

UK . 10,797 parts In-Stock

1+ parts

-

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10,797

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-

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Bristol Electronics

USA . 5,019 parts In-Stock

1+ parts

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5,019

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-

-

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TME

Poland . 3,300 parts In-Stock

1+ parts

-

100+ parts

$0.036

1k+ parts

$0.032

10k+ parts

$0.028

3,300

-

$0.036

$0.032

$0.028

Martec Srl

Italy . 80 parts In-Stock

1+ parts

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80

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Prism Electronics

USA . 13 parts In-Stock

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13

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 185,349 parts In-Stock

1+ parts

$0.021

100+ parts

-

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-

10k+ parts

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185,349

$0.021

-

-

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Argo Parts USA

USA . 1,007 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

$0.047

1,007

$0.048

-

-

$0.047

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.048

100+ parts

$0.047

1k+ parts

-

10k+ parts

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50

$0.048

$0.047

-

-

Continental Prestige Electronics

USA . 4,440 parts In-Stock

1+ parts

$0.243

100+ parts

$0.099

1k+ parts

$0.042

10k+ parts

$0.028

4,440

$0.243

$0.099

$0.042

$0.028

Aztec Data Supply Inc.

USA . 500 parts In-Stock

1+ parts

$0.880

100+ parts

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500

$0.880

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Eastek

USA . 408,000 parts In-Stock

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408,000

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RC Electronics

USA . 45,950 parts In-Stock

1+ parts

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$0.050

1k+ parts

$0.050

10k+ parts

$0.050

45,950

-

$0.050

$0.050

$0.050

Perfect Parts

USA . 26,251 parts In-Stock

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26,251

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Lixinc

USA . 15,433 parts In-Stock

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15,433

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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GreenTree Electronics

Israel . 1,616 parts In-Stock

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1,616

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Overview

Upgrade your electronic designs with the DDTC143ZUA-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. This small signal bipolar junction transistor (BJT) with NPN polarity and a single configuration is ideal for a wide range of applications. With a built-in resistor, gull wing terminals, and a small outline package style, this transistor offers convenience and ease of use. Trust Diodes Incorporated to deliver exceptional performance and value in every component. Elevate your projects with the DDTC143ZUA-7-F today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design and saves space by integrating the resistor within the transistor package.

Surface Mount: YES

Enables easy and efficient PCB assembly, making it suitable for mass production.

Package Shape: RECTANGULAR

Facilitates streamlined PCB layout and component placement.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low to medium power applications, ensuring reliable operation.

Minimum DC Current Gain (hFE): 80

Ensures consistent and stable amplification of the input signal.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ideal for applications requiring extended operation.

Maximum Collector-Emitter Voltage: 50 V

Provides a high voltage rating for safe and reliable operation in various circuits.

Transistor Element Material: SILICON

Offers good performance characteristics and reliability compared to other materials.

Maximum Collector Current (IC): 0.1 A

Suitable for low current applications, ensuring efficient operation.

Terminal Finish: MATTE TIN

Provides good solderability and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 250 MHz

Suitable for high frequency applications, enabling fast response and signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC143ZUA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC143ZUA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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