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DDTC124XE-7

Diodes Incorporated

DDTC124XE-7 by Diodes Incorporated

DDTC124XE-7 by Diodes Incorporated is a NPN BJT with built-in resistor, ideal for small signal applications. With hFE of 68, VCE of 50V, and fT of 250MHz, it offers high performance in a compact SOT package. Suitable for surface mount designs requiring low collector current (0.05A).

Median Price

$0.530

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,144 parts In-Stock

1+ parts

$0.530

100+ parts

$0.205

1k+ parts

$0.137

10k+ parts

-

2,144

$0.530

$0.205

$0.137

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$0.108

-

-

-

Vyrian

USA . 4,676 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,676

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.106

100+ parts

-

1k+ parts

$0.102

10k+ parts

-

2,000

$0.106

-

$0.102

-

Continental Prestige Electronics

USA . 5,783 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

$0.106

5,783

$0.108

-

-

$0.106

Argo Parts USA

USA . 3,857 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

-

10k+ parts

$0.105

3,857

$0.108

-

-

$0.105

Ampacity Inc.

Singapore . 5,108 parts In-Stock

1+ parts

$0.297

100+ parts

-

1k+ parts

-

10k+ parts

-

5,108

$0.297

-

-

-

Component Stockers USA

USA . 3,666 parts In-Stock

1+ parts

$0.340

100+ parts

$0.160

1k+ parts

$0.100

10k+ parts

-

3,666

$0.340

$0.160

$0.100

-

Perfect Parts

USA . 2,887 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,887

-

-

-

-

Overview

Elevate your electronic designs with the DDTC124XE-7 by Diodes Incorporated. Crafted with precision and expertise, this small signal BJT transistor offers unparalleled quality and reliability. Perfect for a wide range of applications, this NPN transistor comes in a convenient rectangular package, making it ideal for surface mount installations. With a built-in resistor and a maximum collector-emitter voltage of 50V, this transistor delivers exceptional performance with a DC current gain of 68 and a transition frequency of 250MHz. Trust Diodes Incorporated to provide you with cutting-edge components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various electronic projects.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for compact electronics.

Surface Mount: YES

Enables easy and efficient placement on PCBs, ideal for automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the PCB and easy integration into circuit designs.

No. of Terminals: 3

Simplifies connection in circuits and reduces the risk of errors during installation.

Terminal Form: GULL WING

Gull wing terminals provide secure soldering connections, ensuring reliable electrical conductivity.

Minimum DC Current Gain (hFE): 68

High DC current gain allows for efficient amplification, making this transistor suitable for signal amplification applications.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing flexibility for various circuit designs.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a dependable choice for electronic projects.

Maximum Collector Current (IC): 0.05 A

Able to handle up to 50 mA of collector current, making it suitable for low power applications.

Terminal Finish: TIN LEAD

Tin lead finish on terminals provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for flexible circuit connections and orientation in PCB layouts.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency enables fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC124XE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.14

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC124XE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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