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DDTC143ZCA-7-F

Diodes Incorporated

DDTC143ZCA-7-F by Diodes Incorporated

DDTC143ZCA-7-F by Diodes Inc. is a NPN BJT with built-in resistor, 80 min hFE, and 50V VCEO. Ideal for small outline applications, it has a max power dissipation of 0.2W and operates up to 150°C. With a transition frequency of 250MHz, it's suitable for high-frequency signal amplification in various electronic circuits.

Median Price

$0.039

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 442 parts In-Stock

1+ parts

$0.035

100+ parts

$0.013

1k+ parts

$0.006

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-

442

$0.035

$0.013

$0.006

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Newark

USA . 1,020 parts In-Stock

1+ parts

$0.201

100+ parts

$0.062

1k+ parts

$0.045

10k+ parts

-

1,020

$0.201

$0.062

$0.045

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Farnell

UK . 1,020 parts In-Stock

1+ parts

-

100+ parts

$0.051

1k+ parts

$0.024

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$0.021

1,020

-

$0.051

$0.024

$0.021

Element14

Singapore . 1,020 parts In-Stock

1+ parts

-

100+ parts

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$0.043

10k+ parts

$0.037

1,020

-

-

$0.043

$0.037

Verical

USA . 442 parts In-Stock

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-

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$0.006

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442

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$0.006

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Chip1Stop

Japan . 226 parts In-Stock

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$0.012

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$0.012

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226

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$0.012

$0.012

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Distributors (In-Stock)

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Nova Conductors

Japan . 64 parts In-Stock

1+ parts

$0.039

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64

$0.039

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Vyrian

USA . 16,125 parts In-Stock

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16,125

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Chip Stock

USA . 15,500 parts In-Stock

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15,500

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ComSIT Distribution GmbH

Germany . 3,999 parts In-Stock

1+ parts

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3,999

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TME

Poland . 3,875 parts In-Stock

1+ parts

-

100+ parts

$0.029

1k+ parts

$0.026

10k+ parts

$0.023

3,875

-

$0.029

$0.026

$0.023

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.024

3,000

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-

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$0.024

SPM Sales

USA . 1,935 parts In-Stock

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1,935

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PC Components Company LLC

USA . 1,000 parts In-Stock

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1,000

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Bristol Electronics

USA . 1,000 parts In-Stock

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1,000

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Cyclops Electronics Ltd

UK . 200 parts In-Stock

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200

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Distributors (Availability)

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Ampacity Inc.

Singapore . 309,997 parts In-Stock

1+ parts

$0.010

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309,997

$0.010

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Semicontronic

India . 336,657 parts In-Stock

1+ parts

$0.022

100+ parts

$0.021

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$0.021

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336,657

$0.022

$0.021

$0.021

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.039

100+ parts

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1k+ parts

$0.037

10k+ parts

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1,000

$0.039

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$0.037

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Argo Parts USA

USA . 2,756 parts In-Stock

1+ parts

$0.039

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$0.038

2,756

$0.039

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$0.038

Continental Prestige Electronics

USA . 1,890 parts In-Stock

1+ parts

$0.213

100+ parts

$0.089

1k+ parts

$0.037

10k+ parts

$0.024

1,890

$0.213

$0.089

$0.037

$0.024

Aztec Data Supply Inc.

USA . 200 parts In-Stock

1+ parts

$1.295

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200

$1.295

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Glotronic Ltd.

UK . 300,000 parts In-Stock

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Perfect Parts

USA . 53,100 parts In-Stock

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Lixinc

USA . 7,395 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Enhance your electronic projects with the DDTC143ZCA-7-F by Diodes Incorporated. This high-quality NPN transistor with a built-in resistor offers superior performance and reliability, making it perfect for a wide range of small signal applications. With its compact design and impressive specifications, this transistor provides exceptional value and efficiency for all your circuit needs. Upgrade your projects today with the DDTC143ZCA-7-F and experience the difference that Diodes Incorporated products can make!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type:

NPN - Allows for easy integration into NPN transistor circuits for amplification and switching purposes.

Configuration:

SINGLE WITH BUILT-IN RESISTOR - Simplifies circuit design and saves space by integrating a resistor directly into the transistor package.

Surface Mount:

YES - Easy to mount on PCBs, saving time and effort during assembly.

Package Shape:

RECTANGULAR - Compact shape allows for efficient use of space on a PCB.

Terminal Form:

GULL WING - Facilitates reliable soldering during assembly.

No. of Terminals:

3 - Provides essential connections for proper transistor operation.

Maximum Power Dissipation (Abs):

0.2 W - Allows for safe operation within specified power limits.

Package Style (Meter):

SMALL OUTLINE - Ideal for applications where space is limited.

Minimum DC Current Gain (hFE):

80 - Ensures reliable amplification performance in various circuits.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage:

50 V - Handling high voltages ensures versatile use in different circuit designs.

Transistor Element Material:

SILICON - Offers high performance and reliability for various applications.

Maximum Collector Current (IC):

0.1 A - Capable of handling moderate current levels, allowing for use in a variety of circuits.

Terminal Finish:

MATTE TIN - Enhances solderability for a secure connection.

Terminal Position:

DUAL - Enables easy and secure connection to external circuits.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures reliability during soldering processes.

Peak Reflow Temperature °C:

260 - Withstands high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT):

250 MHz - Offers high-frequency performance for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC143ZCA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTANCE RATIO 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC143ZCA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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