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DDTC113TUA-7-F

Diodes Incorporated

DDTC113TUA-7-F by Diodes Incorporated

DDTC113TUA-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. Features include hFE of 100, VCEO of 50V, and fT of 250MHz. Its Gull Wing terminals and compact package make it suitable for surface mount designs in various electronic circuits.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,779 parts In-Stock

1+ parts

$0.220

100+ parts

$0.083

1k+ parts

$0.049

10k+ parts

$0.035

9,779

$0.220

$0.083

$0.049

$0.035

DigiKey

USA . 2,970 parts In-Stock

1+ parts

$0.220

100+ parts

$0.082

1k+ parts

$0.053

10k+ parts

$0.037

2,970

$0.220

$0.082

$0.053

$0.037

Verical

USA . 69,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

69,000

-

-

-

$0.024

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 680 parts In-Stock

1+ parts

$1.428

100+ parts

-

1k+ parts

-

10k+ parts

-

680

$1.428

-

-

-

Northwest PG Solutions

USA . 1,902 parts In-Stock

1+ parts

$1.571

100+ parts

-

1k+ parts

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10k+ parts

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1,902

$1.571

-

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Perfect Parts

USA . 71,508 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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71,508

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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7,000

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

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GreenTree Electronics

Israel . 2,974 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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2,974

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Overview

Upgrade your electronic designs with the DDTC113TUA-7-F by Diodes Incorporated, a top-tier manufacturer known for quality and reliability. This small signal bipolar junction transistor offers NPN polarity in a single configuration with a built-in resistor, making it ideal for a wide range of applications. Its compact size and high DC current gain ensure efficient performance, while its maximum collector-emitter voltage and operating temperature make it suitable for demanding environments. Trust Diodes Incorporated to deliver cutting-edge technology that enhances your projects and provides unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good protection and insulation for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and switching applications, making this product versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making it convenient for small signal applications.

Surface Mount: YES

Surface mount capability allows easy and efficient PCB assembly, suitable for automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape is space-saving and easy to handle during assembly, contributing to overall efficiency.

Terminal Form: GULL WING

Gull wing terminals provide secure solder joints and easy PCB mounting, ensuring reliable connections.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels, suitable for various applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting, ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 100

A minimum DC current gain of 100 ensures a consistent amplification factor, providing stable performance in signal amplification circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, enhancing its reliability.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for reliable operation in various voltage conditions, making it versatile.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring consistent operation over a long lifespan.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A enables the transistor to handle moderate current levels, suitable for small signal applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and conductivity, ensuring secure connections for reliable circuit operation.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and easy connectivity, enhancing design options for circuit integration.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30s, the transistor can withstand reflow soldering processes efficiently.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable solder joints and proper bonding during manufacturing processes.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250MHz, this transistor is suitable for high-frequency applications, such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC113TUA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC113TUA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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