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DDTC114ECA-7-F

Diodes Incorporated

DDTC114ECA-7-F by Diodes Incorporated

DDTC114ECA-7-F by Diodes Inc. is a NPN BJT with built-in resistor, ideal for small signal applications. With a max power dissipation of 0.2W and max collector-emitter voltage of 50V, it operates up to 150°C. Featuring a transition frequency of 250MHz, this transistor is suitable for high-frequency circuits in compact designs.

Median Price

$0.084

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,867 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

1k+ parts

$0.050

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1,867

$0.210

$0.079

$0.050

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Mouser Electronics

USA . 502 parts In-Stock

1+ parts

$0.210

100+ parts

$0.079

1k+ parts

$0.051

10k+ parts

$0.039

502

$0.210

$0.079

$0.051

$0.039

Newark

USA . 365 parts In-Stock

1+ parts

$0.221

100+ parts

$0.064

1k+ parts

$0.045

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365

$0.221

$0.064

$0.045

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Avnet

USA . 309,000 parts In-Stock

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309,000

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Arrow

USA . 63,000 parts In-Stock

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$0.023

63,000

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$0.023

Verical

USA . 63,000 parts In-Stock

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$0.023

63,000

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$0.023

Farnell

UK . 365 parts In-Stock

1+ parts

-

100+ parts

$0.052

1k+ parts

$0.022

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$0.021

365

-

$0.052

$0.022

$0.021

Element14

Singapore . 365 parts In-Stock

1+ parts

-

100+ parts

$0.084

1k+ parts

$0.040

10k+ parts

$0.037

365

-

$0.084

$0.040

$0.037

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.043

100+ parts

-

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900

$0.043

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TME

Poland . 6,000 parts In-Stock

1+ parts

$0.210

100+ parts

$0.078

1k+ parts

$0.053

10k+ parts

$0.025

6,000

$0.210

$0.078

$0.053

$0.025

NAC Semi

USA . 1,665,000 parts In-Stock

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1,665,000

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Vyrian

USA . 560,119 parts In-Stock

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Chip Stock

USA . 242,500 parts In-Stock

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242,500

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ComSIT Distribution GmbH

Germany . 36,000 parts In-Stock

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36,000

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Bristol Electronics

USA . 9,245 parts In-Stock

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9,245

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PC Components Company LLC

USA . 6,000 parts In-Stock

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6,000

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IBS Electronics

USA . 6,000 parts In-Stock

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$0.035

6,000

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$0.035

Atlantic Semiconductor

USA . 5,543 parts In-Stock

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5,543

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Schukat

Germany . 5,500 parts In-Stock

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$0.026

10k+ parts

$0.016

5,500

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$0.026

$0.016

Inventory MP

USA . 3,702 parts In-Stock

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3,702

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Sensible Micro Corp

USA . 1,963 parts In-Stock

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Lantek

USA . 1,400 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 644,372 parts In-Stock

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$0.015

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$0.015

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644,372

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Ampacity Inc.

Singapore . 557,998 parts In-Stock

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$0.022

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Corohmni

South Africa . 73 parts In-Stock

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$0.041

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73

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Aranea Global

USA . 2,000 parts In-Stock

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$0.042

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$0.040

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2,000

$0.042

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Argo Parts USA

USA . 2,227 parts In-Stock

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$0.043

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$0.042

2,227

$0.043

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$0.042

Continental Prestige Electronics

USA . 1,445 parts In-Stock

1+ parts

$0.205

100+ parts

$0.084

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$0.035

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$0.022

1,445

$0.205

$0.084

$0.035

$0.022

Aztec Data Supply Inc.

USA . 997 parts In-Stock

1+ parts

$1.574

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997

$1.574

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GreenTree Electronics

Israel . 1,092,000 parts In-Stock

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Eastek

USA . 885,000 parts In-Stock

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Kepictronics

USA . 385,540 parts In-Stock

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Perfect Parts

USA . 208,061 parts In-Stock

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Lixinc

USA . 7,805 parts In-Stock

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

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Overview

Unlock the power of innovation with the DDTC114ECA-7-F from Diodes Incorporated. As a leader in small signal bipolar junction transistors, Diodes Incorporated sets the standard for quality and reliability. Featuring a single configuration with built-in resistor, this NPN transistor offers exceptional performance in a compact package. Ideal for a wide range of applications, this product delivers value and benefits that customers can trust. Experience the advantages of advanced technology and superior design with the DDTC114ECA-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package is lightweight and durable, making the transistor easy to handle and resistant to damage during installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for compact electronic devices.

Surface Mount: YES

Surface mount technology allows for automated assembly processes, reducing manufacturing costs and improving production efficiency.

Package Shape: RECTANGULAR

Rectangular shape makes the transistor easy to mount on the PCB and ensures proper alignment for soldering.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and prevent solder bridging, ensuring reliable performance in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a higher power dissipation, this transistor can handle more heat without overheating, ensuring long-term reliability in operation.

Minimum DC Current Gain (hFE): 30

Higher minimum DC current gain ensures consistent amplification performance in the circuit, making this transistor suitable for signal processing applications.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the transistor to withstand harsh environmental conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating provides a wide voltage margin for the transistor, enhancing the device's robustness in the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this product a dependable choice for electronic circuits.

Maximum Collector Current (IC): 0.05 A

Maximum collector current rating of 0.05 A allows the transistor to handle moderate current levels, making it suitable for low-power applications.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals provides good solderability and corrosion resistance, ensuring a reliable electrical connection in the circuit.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout options and facilitates easy connection to external components, enhancing the transistor's versatility in design.

Maximum Time At Peak Reflow Temperature (s): 30

Short time at peak reflow temperature ensures minimal thermal stress on the transistor during assembly, preserving its electrical properties.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints and prevents component damage during the assembly process, improving overall product quality.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency indicates fast switching speed and high-frequency performance, making this transistor suitable for high-speed digital and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC114ECA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC114ECA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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