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DDTC143FCA-7-F

Diodes Incorporated

DDTC143FCA-7-F by Diodes Incorporated

DDTC143FCA-7-F by Diodes Inc. is a NPN BJT with 50V VCEO, 0.1A IC, and 250MHz fT. It comes in a small outline package with built-in resistor, ideal for high-frequency applications requiring low power dissipation. Suitable for surface mount designs due to its gull wing terminals and matte tin finish.

Median Price

$0.097

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 21,690 parts In-Stock

1+ parts

$0.170

100+ parts

$0.072

1k+ parts

$0.045

10k+ parts

$0.043

21,690

$0.170

$0.072

$0.045

$0.043

DigiKey

USA . 2,425 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.049

10k+ parts

$0.034

2,425

$0.200

$0.076

$0.049

$0.034

Verical

USA . 51,000 parts In-Stock

1+ parts

-

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$0.024

51,000

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-

-

$0.024

Arrow

USA . 47,555 parts In-Stock

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-

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$0.019

47,555

-

-

-

$0.019

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

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$0.041

6,000

-

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$0.041

Nova Conductors

Japan . 80 parts In-Stock

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80

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Distributors (Availability)

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Semicontronic

India . 38,763 parts In-Stock

1+ parts

$0.013

100+ parts

$0.013

1k+ parts

$0.013

10k+ parts

-

38,763

$0.013

$0.013

$0.013

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Ampacity Inc.

Singapore . 38,758 parts In-Stock

1+ parts

$0.013

100+ parts

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38,758

$0.013

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Corohmni

South Africa . 132 parts In-Stock

1+ parts

$0.046

100+ parts

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132

$0.046

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,891 parts In-Stock

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17,891

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Argo Parts USA

USA . 4,749 parts In-Stock

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4,749

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Eastek

USA . 3,000 parts In-Stock

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3,000

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Continental Prestige Electronics

USA . 1,458 parts In-Stock

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1,458

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Perfect Parts

USA . 1,136 parts In-Stock

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1,136

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iodParts Technologies Inc.

India . 150 parts In-Stock

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150

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Elevate your electronic designs with the DDTC143FCA-7-F by Diodes Incorporated. This small signal bipolar junction transistor offers unmatched quality and reliability, thanks to its manufacturer's reputation for excellence. Ideal for a wide range of applications, this NPN transistor with built-in resistor provides exceptional performance and efficiency. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 250MHz, this transistor delivers value and versatility to customers looking to enhance their projects. Say goodbye to limitations and hello to endless possibilities with the DDTC143FCA-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to damage, ensuring the longevity of the transistor.

Polarity or Channel Type: NPN

NPN type transistor allows for easy integration into existing circuit designs, making it versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space, reducing the overall component count and cost.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time during manufacturing.

Maximum Power Dissipation: 0.2 W

High power dissipation capability ensures reliable performance under different operating conditions, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

High operating temperature range enables the transistor to withstand elevated temperatures, ensuring stable operation in harsh environments.

Nominal Transition Frequency: 250 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications such as amplifiers and RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC143FCA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTANCE RATIO 4.68

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC143FCA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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