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DDTC143XUA-7-F

Diodes Incorporated

DDTC143XUA-7-F by Diodes Incorporated

DDTC143XUA-7-F by Diodes Inc. is a NPN BJT with 50V VCEO, 0.1A IC, and 250MHz fT. It comes in a small outline package and is ideal for low-power applications requiring high transition frequency in surface-mount designs.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 465 parts In-Stock

1+ parts

$0.237

100+ parts

$0.090

1k+ parts

$0.058

10k+ parts

-

465

$0.237

$0.090

$0.058

-

Verical

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.024

45,000

-

-

-

$0.024

Farnell

UK . 465 parts In-Stock

1+ parts

-

100+ parts

$0.070

1k+ parts

$0.046

10k+ parts

$0.036

465

-

$0.070

$0.046

$0.036

Element14

Singapore . 465 parts In-Stock

1+ parts

-

100+ parts

$0.121

1k+ parts

$0.063

10k+ parts

$0.047

465

-

$0.121

$0.063

$0.047

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 17,000 parts In-Stock

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-

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17,000

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Velocity Electronics

USA . 6,000 parts In-Stock

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6,000

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-

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Nova Conductors

Japan . 43 parts In-Stock

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43

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 88 parts In-Stock

1+ parts

$0.299

100+ parts

-

1k+ parts

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10k+ parts

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88

$0.299

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-

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Corohmni

South Africa . 52 parts In-Stock

1+ parts

$1.594

100+ parts

-

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52

$1.594

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Perfect Parts

USA . 31,750 parts In-Stock

1+ parts

-

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31,750

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Lixinc

USA . 9,089 parts In-Stock

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9,089

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

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Argo Parts USA

USA . 4,641 parts In-Stock

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4,641

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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-

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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-

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Continental Prestige Electronics

USA . 2,490 parts In-Stock

1+ parts

-

100+ parts

$0.061

1k+ parts

$0.042

10k+ parts

$0.028

2,490

-

$0.061

$0.042

$0.028

Aranea Global

USA . 100 parts In-Stock

1+ parts

-

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100

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Overview

Enhance your electronic designs with the DDTC143XUA-7-F from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This small signal bipolar junction transistor (BJT) is perfect for various applications, offering exceptional performance and efficiency. With a built-in resistor and high DC current gain, this NPN transistor provides value and versatility to customers. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the DDTC143XUA-7-F today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides insulation and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility and compatibility with many electronic devices.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for compact applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, enhancing production processes.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2 W, this transistor can handle moderate power levels, suitable for various low-power applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact designs and allowing for higher component density.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency indicates that this transistor can operate at high frequencies, making it suitable for RF and high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC143XUA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 2.13

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC143XUA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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