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DDTC124TCA-7-F

Diodes Incorporated

DDTC124TCA-7-F by Diodes Incorporated

DDTC124TCA-7-F by Diodes Inc. is a NPN BJT with built-in resistor, 100 min hFE, and 50V VCEO. Ideal for small signal applications in electronics due to its 250MHz fT, 0.1A IC, and compact SOT package with gull wing terminals. Operating up to 150°C, it's suitable for high-temp environments requiring reliable performance.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,500 parts In-Stock

1+ parts

$0.211

100+ parts

$0.087

1k+ parts

$0.039

10k+ parts

$0.025

8,500

$0.211

$0.087

$0.039

$0.025

DigiKey

USA . 3,789 parts In-Stock

1+ parts

$0.230

100+ parts

$0.086

1k+ parts

$0.055

10k+ parts

-

3,789

$0.230

$0.086

$0.055

-

Mouser Electronics

USA . 1,473 parts In-Stock

1+ parts

$0.230

100+ parts

$0.086

1k+ parts

$0.056

10k+ parts

$0.034

1,473

$0.230

$0.086

$0.056

$0.034

Verical

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.026

51,000

-

-

-

$0.026

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

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12,000

-

-

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Nova Conductors

Japan . 24 parts In-Stock

1+ parts

-

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-

1k+ parts

-

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24

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 17,371 parts In-Stock

1+ parts

$0.018

100+ parts

$0.018

1k+ parts

$0.017

10k+ parts

-

17,371

$0.018

$0.018

$0.017

-

Ampacity Inc.

Singapore . 17,210 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

17,210

$0.039

-

-

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Corohmni

South Africa . 292 parts In-Stock

1+ parts

$0.053

100+ parts

-

1k+ parts

-

10k+ parts

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292

$0.053

-

-

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Component Stockers USA

USA . 19,119 parts In-Stock

1+ parts

$0.200

100+ parts

$0.070

1k+ parts

$0.040

10k+ parts

$0.020

19,119

$0.200

$0.070

$0.040

$0.020

Perfect Parts

USA . 47,264 parts In-Stock

1+ parts

-

100+ parts

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47,264

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iodParts Technologies Inc.

India . 32,886 parts In-Stock

1+ parts

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100+ parts

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32,886

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Eastek

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Continental Prestige Electronics

USA . 2,672 parts In-Stock

1+ parts

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2,672

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Argo Parts USA

USA . 2,105 parts In-Stock

1+ parts

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100+ parts

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2,105

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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Aranea Global

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Overview

Unlock the potential of your electronic designs with the DDTC124TCA-7-F by Diodes Incorporated. This small signal NPN transistor with a built-in resistor offers high-quality performance in a compact rectangular package. Ideal for a wide range of applications, this transistor provides a minimum DC current gain of 100 and a maximum operating temperature of 150°C. Trust in the reliability and expertise of Diodes Incorporated to deliver superior products that bring value and innovation to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile and compatible with a wide range of circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor a convenient and efficient choice for applications requiring a resistor in the circuit.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving time and effort in assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape is common and easy to handle, making it suitable for automated assembly processes and ensuring compatibility with standard mounting techniques.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections and efficient heat dissipation, ensuring reliable performance in various operating conditions.

No. of Terminals: 3

With 3 terminals, this transistor is easy to integrate into circuit designs and offers flexibility in connection options for different applications.

Maximum Power Dissipation (Abs): 0.2 W

The low maximum power dissipation allows for efficient energy usage and helps prevent overheating, ensuring the durability and reliability of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making this transistor suitable for compact electronic devices and applications with limited space constraints.

Minimum DC Current Gain (hFE): 100

With a minimum DC current gain of 100, this transistor provides consistent and reliable amplification of signals in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of environmental conditions, making this transistor suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides flexibility in circuit design and allows for safe operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon is a reliable and widely used semiconductor material, ensuring the performance and longevity of the transistor in various operating conditions.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A allows for efficient current handling, making this transistor suitable for low to medium power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections, enhancing the performance and longevity of the transistor.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and connection options, making this transistor suitable for a variety of electronic applications.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature allows for efficient and reliable soldering processes, ensuring quality connections and performance of the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating of 260°C ensures robust solder connections and reliable performance in various assembly processes.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency enables fast signal switching and efficient amplification, making this transistor suitable for high-frequency applications such as radio frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DDTC124TCA-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DDTC124TCA-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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