Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MMST5401-7
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;
.2 A
150 V
SINGLE
50
R-PDSO-G3
e0
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
PNP
Not Qualified
YES
TIN LEAD
GULL WING
DUAL
SWITCHING
SILICON
100 MHz
MMDT5401-7
MMDT5401-7 by Diodes Inc. is a PNP BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 50, Vce of 150V, and fT of 100MHz. This surface-mount device in a small outline package features Gull Wing terminals and silicon material for efficient performance.
SEPARATE, 2 ELEMENTS
R-PDSO-G6
2
6
MMDT5451-7
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
160 V
30
e3
260
NPN AND PNP
Matte Tin (Sn)
MMST3904-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: Tin/Lead (Sn/Pb);
40 V
235
NPN
Tin/Lead (Sn/Pb)
10
300 MHz
70 ns
MMST3906-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
300 ns
MMST4124-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;
25 V
60
MMST4126-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;
250 MHz
NST3904DXV6T5
Onsemi
The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.
R-PDSO-F6
.5 W
Other Transistors
TIN
FLAT
AMPLIFIER
250 ns
NST3946DXV6T1
NST3946DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a small outline package with 6 terminals. With max power dissipation of 0.5W, max collector-emitter voltage of 40V, and transition frequency of 300MHz, it offers efficient performance in various electronic circuits.
BIP General Purpose Small Signal
NST3946DXV6T5
NST3946DXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150 °C with a max collector-emitter voltage of 40V and transition frequency of 300MHz.
MMBT4124-7-F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .2 A;
.3 W
MATTE TIN
MMBT4126-7-F
Diodes Inc. MMBT4126-7-F is a PNP BJT transistor for switching applications. Features include VCEsat of 0.4V, hFE of 60, and fT of 250MHz. With max ratings of 25V VCEO and 0.2A IC, it operates b/w -55°C to 150°C in a small outline package suitable for surface mount technology.
4.5 pF
Single
-55 Cel
.2 W
.4 V
MMDT4124-7-F
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
HIGH RELIABILITY
MMDT4126-7-F
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
MMST4124-7-F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
PZT3906T1
PZT3906T1 by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits due to its high transition frequency of 250MHz and low turn-on time of 70ns.
COLLECTOR
TO-261AA
R-PDSO-G4
4
MMBT3904-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;
MMBT3904T-13
MMBT3906-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
MMBT3906T-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
.15 W
AEC-Q101
DMMT5551-7
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;
DMMT5401-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;
2N3904RLRMG
2N3904RLRMG by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for low-power applications like amplification circuits due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.
TO-92
O-PBCY-T3
e1
ROUND
CYLINDRICAL
.625 W
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
MBT3904DW2T1
MBT3904DW2T1 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W, hFE of 30, and operates up to 150 °C. This transistor features Gull Wing terminals, small outline package style, and can handle a max collector-emitter voltage of 40V.
MMDT3904V-7
MMDT3904V-7 by Diodes Inc. is a NPN BJT with 2 elements, suitable for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 300MHz. This transistor comes in a small outline package and operates up to 150°C, making it ideal for compact electronic devices.
MMDT3906V-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
NUS2401SNT1G
NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.
BUILT IN BIAS RESISTORS
50 V
COMPLEX
150
.35 W
2N3904RLRPG
2N3904RLRPG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 30, and fT of 300MHz. Ideal for low-power applications in electronics due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.
1.5 W
2N3906RLRMG
2N3906RLRMG by Onsemi is a PNP BJT with max. power dissipation of 1.5W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for applications requiring low current amplification in through-hole configurations at up to 150°C operating temperature.
2N3906RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2369ALT3G
MMBT2369ALT3G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 15V, max current of 0.2A, and min DC current gain of 20. With a small outline package style, it's ideal for surface mount designs requiring fast switching speeds.
15 V
20
TO-236AB
18 ns
12 ns
MPS2369AG
MPS2369AG by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it's suitable for high-speed circuit designs.
.36 W
500 MHz
BCX70J-TP
Micro Commercial Components
BCX70J-TP by Micro Commercial Components is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 45V, hFE of 250, and fT of 250MHz. With surface mount capability and GULL WING terminals, it's ideal for compact electronic designs requiring fast switching speeds.
LOW NOISE
45 V
250
.25 W
800 ns
150 ns
MMBT3904_NL
Fairchild Semiconductor
MMBT3904_NL by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 0.2A, and min DC current gain of 30. With a small outline package style and surface mount capability, it operates b/w -55 to 150°C and has a transition frequency of 300MHz.
40
MMBT3906_NL
MMBT3906_NL by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 40V and max collector current of 0.2A. With a transition frequency of 250MHz, it operates b/w -55 to 150°C, making it ideal for small outline packages in electronic devices.
MMBT3904K
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MPSA18RLRPG
MPSA18RLRPG by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A, ideal for amplifier applications. It has a min DC current gain of 500 and operates at temperatures up to 150 °C, featuring a cylindrical package style with through-hole terminals.
500
160 MHz
2N3904RL1G
2N3904RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its single configuration and max. collector-emitter voltage of 40V.
EUROPEAN PART NUMBER
2N3904ZL1G
2N3904ZL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Package style: cylindrical, terminal finish: Tin Silver Copper, peak reflow temp: 260°C.
2N3906RL1G
2N3906RL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its single configuration and cylindrical package style. Operating temp ranges from -55 °C to 150°C, making it versatile in various environments.
2N3906ZL1G
2N3906ZL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (70ns/300ns) and high transition frequency (250MHz).
2N4124G
2N4124G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 60, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 25V and max. collector current of 0.2A in a cylindrical package shape.
MPS2369G
MPS2369G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 15V and max collector current of 0.2A. With a transition frequency of 500MHz, it operates b/w -55 to 150 °C, making it suitable for various electronic circuits.
MPS2369ARLRPG
MPS2369ARLRPG by Onsemi is a NPN BJT transistor with 3 terminals and max power dissipation of 0.36W. It has a min DC current gain of 20, max collector-emitter voltage of 15V, and nominal transition frequency of 500MHz. Ideal for switching applications due to its fast turn on/off times (ton: 12ns, toff: 18ns) and peak reflow temp of 260 °C.
MPS2369RLRAG
MPS2369RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 20, and fT of 500MHz. Ideal for switching applications due to its single configuration and max. collector-emitter voltage of 15V.
MPS4124G
MPS4124G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max power dissipation of 0.625W, hFE of 60, and operates at up to 150 °C. With a max collector-emitter voltage of 25V and max collector current of 0.2A, it offers reliable performance in various electronic circuits.
170 MHz
MPSA18G
MPSA18G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A. With a min DC current gain of 500, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.
MPSA18RLRMG
MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.
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